BAS45A,143 NXP Semiconductors, BAS45A,143 Datasheet - Page 2

DIODE LO-LEAK 125V 250MA DO-34

BAS45A,143

Manufacturer Part Number
BAS45A,143
Description
DIODE LO-LEAK 125V 250MA DO-34
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS45A,143

Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
125V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
1nA @ 125V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
1.5µs
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AG, DO-34, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934031240143
NXP Semiconductors
FEATURES
• Continuous reverse voltage:
• Repetitive peak forward current:
• Low reverse current: max. 1 nA
• Switching time: typ. 1.5 μs.
APPLICATION
• Low leakage current applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board without metallization pad.
1996 Mar 13
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
max. 125 V
max. 625 mA
stg
j
RRM
R
tot
Low-leakage diode
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current square wave; T
total power dissipation
storage temperature
junction temperature
PARAMETER
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a
hermetically-sealed glass SOD68 (DO-34) package.
see Fig.2; note 1
surge; see Fig.4
T
amb
handbook, halfpage
t
t
t
p
p
p
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
= 1 μs
= 1 ms
= 1 s
= 25 °C
2
k
CONDITIONS
j
= 25 °C prior to
a
MIN.
−65
MAM156
Product data sheet
+175
MAX.
125
125
250
625
300
175
BAS45A
4
1
0.5
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT

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