BAS45A,143 NXP Semiconductors, BAS45A,143 Datasheet - Page 5

• Manufacturer Part Number: BAS45A,143
• Description: DIODE LO-LEAK 125V 250MA DO-34
• Manufacturer: NXP Semiconductors

Specifications of BAS45A,143

• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 125V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 1nA @ 125V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934031240143

NXP Semiconductors
1996 Mar 13
handbook, full pagewidth
handbook, halfpage
Low-leakage diode
V
Fig.5
R
= 125 V.
V = V
(nA)
I R
10
10
10
10
10
R = 50
1
4
3
2
1
S
R
0
Reverse current as a function of junction
temperature.
I x R
F
Ω
S
50
I F
D.U.T.
Fig.7 Reverse recovery time test circuit and waveforms.
max
100
typ
T ( C)
OSCILLOSCOPE
j
SAMPLING
o
R = 50
MGA881
MBD456
i
150
Ω
V R
5
10%
handbook, halfpage
t r
f = 1 MHz; T
Fig.6
90%
(pF)
C d
input signal
3
2
1
0
0
Diode capacitance as a function of reverse
voltage; typical values.
t p
j
= 25 °C.
5
t
10
I F
output signal
15
Product data sheet
V R (V)
BAS45A
t rr
MBG524
20
(1)
t