BAS45A,143 NXP Semiconductors, BAS45A,143 Datasheet - Page 4

• Manufacturer Part Number: BAS45A,143
• Description: DIODE LO-LEAK 125V 250MA DO-34
• Manufacturer: NXP Semiconductors

Specifications of BAS45A,143

• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 125V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 1nA @ 125V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934031240143

NXP Semiconductors
GRAPHICAL DATA
1996 Mar 13
handbook, halfpage
handbook, full pagewidth
Low-leakage diode
Device mounted on a printed-circuit board without metallization pad.
Fig.2
Fig.4
Based on square wave currents;T
(mA)
I FSM
I F
(A)
10
300
200
100
10
10
−1
0
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient temperature.
Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
j
= 25 °C prior to surge.
10
T amb (
o
C)
MBG522
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
I F
300
200
100
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage.
0.5
10
3
(1)
1.0
t p (μs)
(2)
Product data sheet
(3)
V F (V)
BAS45A
MBG523
MBG704
1.5
10
4