RURG8060 Fairchild Semiconductor, RURG8060 Datasheet

RURG8060

Manufacturer Part Number

RURG8060

Description

DIODE ULTRAFAST 600V 80A TO-247

Manufacturer

Fairchild Semiconductor

Datasheet

1.RURG8060.pdf (4 pages)

Specifications of RURG8060

Voltage - Forward (vf) (max) @ If

1.6V @ 80A

Voltage - Dc Reverse (vr) (max)

600V

Current - Average Rectified (io)

80A

Current - Reverse Leakage @ Vr

250µA @ 600V

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

85ns

Mounting Type

Through Hole, Radial

Package / Case

TO-247-2

Product

Ultra Fast Recovery Rectifier

Configuration

Single

Reverse Voltage

600 V

Forward Voltage Drop

1.6 V

Recovery Time

85 ns

Forward Continuous Current

80 A

Max Surge Current

800 A

Reverse Current Ir

250 uA

Power Dissipation

180 W

Mounting Style

Through Hole

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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Current page: 1 of 4
Download datasheet (331Kb)

80A, 600V Ultrafast Diode

The RURG8060 is an ultrafast diode with soft recovery

characteristics (t

and is of silicon nitride passivated ion-implanted epitaxial

planar construction.

This device is intended for use as a freewheeling/clamping

diode and rectiﬁer in a variety of switching power supplies

and other power switching applications. Its low stored charge

and ultrafast recovery with soft recovery characteristic

minimize ringing and electrical noise in many power

switching circuits, thus reducing power loss in the switching

transistors.

Formerly developmental type TA09886.

Ordering Information

NOTE: When ordering, use the entire part number.

Symbol

Absolute Maximum Ratings

Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Average Rectiﬁed Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

RURG8060

(Square Wave, 20kHz)

(Halfwave, 1 Phase, 60Hz)

PART NUMBER

= 72

< 75ns). It has low forward voltage drop

TO-247

PACKAGE

Data Sheet

= 25

RURG8060

C, Unless Otherwise Speciﬁed

BRAND

Features

• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <75ns

• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

• Avalanche Energy Rated

• Planar Construction

Applications

• Switching Power Supplies

• Power Switching Circuits

• General Purpose

Packaging

SIDE METAL)

CATHODE

(BOTTOM

January 2002

JEDEC STYLE 2 LEAD TO-247

STG

F(AV)

RWM

RRM

FRM

FSM

AVL

, T

RURG8060

-65 to 175

600

160

800

180

RURG8060

ANODE

CATHODE

RURG8060 Rev. B

UNITS

Related parts for RURG8060

RURG8060 Summary of contents

Page 1

... Data Sheet 80A, 600V Ultrafast Diode The RURG8060 is an ultrafast diode with soft recovery characteristics (t < 75ns). It has low forward voltage drop rr and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectiﬁ variety of switching power supplies and other power switching applications ...

Page 2

... I RM 1000 0.01 2.0 2.5 3.0 MIN TYP MAX - - 1 1 250 - - 2 0.83 through 25 (See Figure 6 175 C 100 10 o 100 100 200 300 400 V , REVERSE VOLTAGE (V) F FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE UNITS V V µ C/W 500 600 RURG8060 Rev. B ...

Page 3

... DUT FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation (Continued DUT CURRENT SENSE + FIGURE 8. AVALANCHE CURRENT AND VOLTAGE 100 SQ. WAVE 100 125 T , CASE TEMPERATURE ( C FIGURE 4. CURRENT DERATING CURVE FIGURE 6. t WAVEFORMS AND DEFINITIONS rr V AVL WAVEFORMS 150 175 0. RURG8060 Rev. B ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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