ISL9R8120P2 Fairchild Semiconductor, ISL9R8120P2 Datasheet - Page 2

• Manufacturer Part Number: ISL9R8120P2
• Description: 8 AMP 1200V STEALTH DIODE
• Manufacturer: Fairchild Semiconductor
• Series: Stealth™r

Specifications of ISL9R8120P2

• Voltage - Forward (vf) (max) @ If: 3.3V @ 8A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 3.3 V
• Recovery Time: 44 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 100 A
• Reverse Current Ir: 100 uA
• Power Dissipation: 71 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Repetitive Reverse Voltage Vrrm Max: 1.2kV
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 3.3V
• Reverse Recovery Time Trr Max: 44ns
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q1563503

©2002 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
I
I
I
Symbol
RM(REC)
RM(REC)
RM(REC)
dI
R
R
Q
Q
Q
Device Marking
V
C
I
M
t
t
t
t
S
S
RR
RR
RR
R
rr
rr
rr
rr
F
JC
R8120S3S
J
JA
/dt
R8120P2
Instantaneous Reverse Current
Instantaneous Forward Voltage
Junction Capacitance
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during t
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-220, TO-263
Parameter
ISL9R8120S3S
ISL9R8120P2
b
b
/t
/t
a
a
Device
)
)
b
T
C
= 25°C unless otherwise noted
TO-220AC
TO-263AB
Package
V
I
V
I
I
I
dI
V
I
dI
V
T
I
dI
V
T
TO-220, TO-263
F
F
F
F
F
F
C
C
R
R
R
R
R
F
F
F
= 8A
= 1A, dI
= 8A, dI
= 8A,
= 8A,
= 8A,
/dt = 200A/µs,
/dt = 200A/µs,
/dt = 1000A/µs,
= 1200V
= 10V, I
= 780V, T
= 780V,
= 125°C
= 780V,
= 125°C
F
F
Test Conditions
F
/dt = 100A/µs, V
/dt = 100A/µs, V
= 0A
C
= 25°C
T
T
T
T
C
C
C
C
= 25°C
= 125°C
= 25°C
= 125°C
Tape Width
R
R
24mm
= 30V
= 30V
N/A
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ISL9R8120P2 / ISL9R8120S3S Rev. A
300
525
375
200
310
Typ
2.8
2.7
4.3
5.5
1.1
5.5
1.2
30
25
35
11
9
-
-
-
-
Max
1.75
100
Quantity
1.0
3.3
3.1
32
44
62
-
-
-
-
-
-
-
-
-
-
-
-
-
800
50
°C/W
°C/W
Units
A/µs
mA
µA
nC
µC
µC
pF
ns
ns
ns
ns
ns
V
V
A
A
A
-
-