FFPF06U40STSTU Fairchild Semiconductor, FFPF06U40STSTU Datasheet - Page 21
FFPF06U40STSTU
Manufacturer Part Number
FFPF06U40STSTU
Description
DIODE ULT FAST 400V 6A TO-220F
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FFPF06U40STSTU
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
6A
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Reverse Leakage @ Vr
-
Voltage - Forward (vf) (max) @ If
-
Capacitance @ Vr, F
-
- Current page: 21 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
SO-8 (Continued)
FDS6990S
FDS7764A
RF1K49156
FDS7788
FDS7766
FDS7760A
FDS6688
FDS6676
FDS6682
FDS6672A
FDS6670A
FDS6644
FDS6680A
FDS6692
FDS6680
FDS6694
FDS6294
HUF76132SK8
FDS6690A
FDS4410
FDS6690
FDS6614A
FDS6678A
FDS4488
FDS6612A
FDS9412
NDS9410A
HUF76113SK8
RF1K49157
FDS6630A
HUF76105SK8
FDS7766S
FDS6688S
FDS6676S
FDS7764S
FDS6670S
FDS6680S
FDS6690S
FDS4672A
FDS4770
Products
Min. (V)
BV
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
DSS
Dual SyncFET
Config.
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0055
0.0075
0.0085
0.0095
0.0113
0.0125
0.0135
0.0135
0.0055
0.0075
0.0075
0.0075
0.022
0.004
0.005
0.006
0.007
0.008
0.008
0.011
0.018
0.022
0.022
0.022
0.028
0.038
0.006
0.009
0.011
0.016
10V
0.01
0.01
0.02
0.03
0.05
–
–
R
DS(ON)
2-16
0.0075
0.0095
0.0105
0.0145
0.0135
0.0144
0.0065
0.0075
0.0125
0.005
0.006
0.008
0.007
0.008
0.009
0.013
0.015
0.017
0.025
0.024
0.036
0.042
0.041
0.053
0.078
0.009
0.009
0.017
0.025
0.013
4.5V
0.03
0.01
0.02
0.02
0.03
0.03
–
Max (Ω) @ V
2.5V
GS
Replaced by FDS6612A
Replaced by FDS6612A
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Replaced by FDS6680
=
Discrete Power Products –
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
Typ. (nC)
GS
9.5
5.4
5.3
11
29
37
43
37
40
45
22
33
21
25
16
18
19
13
10
12
13
13
12
13
14
10
41
56
43
25
24
17
17
35
47
9
5
= 5V
I
D
14.5
12.5
12.5
11.5
14.5
13.5
13.5
11.5
13.2
7.5
9.3
7.5
7.9
8.4
7.9
7.3
6.5
6.5
5.5
15
18
17
15
16
14
13
13
12
12
13
11
10
10
17
16
10
11
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2
3
(W)
Related parts for FFPF06U40STSTU
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: