EGP30K Fairchild Semiconductor, EGP30K Datasheet - Page 53

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EGP30K

Manufacturer Part Number
EGP30K
Description
DIODE FAST GPP 3A 800V DO-201AD
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of EGP30K

Voltage - Forward (vf) (max) @ If
1.7V @ 3A
Voltage - Dc Reverse (vr) (max)
800V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 800V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
800 V
Forward Voltage Drop
1.7 V
Recovery Time
75 ns
Forward Continuous Current
3 A @ Ta=55C
Max Surge Current
125 A
Reverse Current Ir
5 uA
Power Dissipation
6.25 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EGP30K
Manufacturer:
VISHAY
Quantity:
150 000
Part Number:
EGP30K
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.fairchildsemi.com
TO-262 (I
IRFI624B
FQI4N25
IRFI614B
FQI3N25
FQI5N30
FQI3N30
FQI2N30
FQI11N40
IRFI740B
FQI7N40
FQI6N40C
FQI6N40
FQI5N40
FQI3N40
FQI6N45
FQI13N50C
FQI9N50
FQI9N50C
IRFI840B
FQI6N50
FQI5N50C
IRFI830B
FQI5N50
SSI1N50B
FQI12N60C
FQI12N60
FQI10N60C
SSI10N60B
FQI7N60
FQI8N60C
SSI7N60B
FQI6N60C
FQI4N60
FQI5N60C
SSI4N60B
SSI2N60B
SSI1N60B
FQI6N70
FQI7N80
Products
2
PAK) (Continued)
Min. (V)
BV
250
250
250
250
300
300
300
400
400
400
400
400
400
400
450
500
500
500
500
500
500
500
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
700
800
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
1.75
0.48
0.54
1.15
0.48
0.73
0.85
0.65
0.73
1.1
2.2
0.9
2.2
3.7
0.8
1.6
3.4
1.1
0.8
1.3
1.4
1.5
1.8
5.5
0.7
0.8
1.2
1.2
2.2
2.5
2.5
1.5
1.5
12
2
1
1
2
5
R
DS(ON)
4.5V
Max (Ω) @ V
2-48
2.5V
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
13.5
16.5
12.5
4.3
8.1
9.8
5.5
3.7
8.3
5.9
27
41
16
13
10
16
43
28
28
41
17
18
27
13
48
42
44
54
29
28
38
16
15
15
22
30
40
4
6
= 5V
I
D
11.4
10.5
4.1
3.6
2.8
2.8
5.4
3.2
2.1
5.5
4.5
2.5
6.2
5.5
4.5
4.5
1.5
9.5
7.4
7.5
5.5
4.4
4.5
6.2
6.6
10
13
12
7
9
9
2
6
9
8
5
7
4
1
(A)
MOSFETs
P
D
147
134
195
147
135
134
225
180
156
156
142
147
147
125
106
100
100
142
167
49
52
40
45
70
55
40
98
73
85
70
55
98
98
73
73
85
36
54
34
(W)

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