EGP30K Fairchild Semiconductor, EGP30K Datasheet - Page 114

• Manufacturer Part Number: EGP30K
• Description: DIODE FAST GPP 3A 800V DO-201AD
• Manufacturer: Fairchild Semiconductor

Specifications of EGP30K

• Voltage - Forward (vf) (max) @ If: 1.7V @ 3A
• Voltage - Dc Reverse (vr) (max): 800V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 800 V
• Forward Voltage Drop: 1.7 V
• Recovery Time: 75 ns
• Forward Continuous Current: 3 A @ Ta=55C
• Max Surge Current: 125 A
• Reverse Current Ir: 5 uA
• Power Dissipation: 6.25 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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Small Signal Transistors – General Purpose Transistors (Continued)
KSA643
SS9012
BC369
BC308
BC309
2N4126
KSA642
2N3702
2N6076
MPS6523
MPS3702
BC328
PN3638
PN3638A
KSB564A
MPS6562
SS8550
BC558
BC559
PN4917
2N4125
2N3703
PN5138
MPS3703
BC213L
BC214L
BC214LB
BC214LC
PN4250
PN4122
2N3905
2N3906
MPS6518
Products
V
CEO
20
20
20
25
25
25
25
25
25
25
25
25
25
25
25
25
25
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
40
(V)
V
CBO
40
40
25
30
30
25
30
40
25
45
40
30
25
25
30
25
40
30
30
30
30
50
30
50
45
45
45
45
40
40
40
40
–
(V)
V
EBO
5
5
5
5
5
4
5
5
5
4
5
5
4
4
5
5
6
5
5
5
4
5
5
5
5
5
5
5
5
5
5
5
4
(V)
Max (A)
500
500
500
500
0.5
0.5
1.5
0.1
0.1
0.2
0.3
0.5
0.5
0.5
0.8
0.8
0.8
0.8
1.5
0.1
0.1
0.2
0.2
0.5
0.5
0.8
0.2
0.2
0.2
0.2
I
–
1
1
C
Min
120
120
120
100
300
100
100
110
110
150
140
200
350
250
150
100
150
40
64
85
70
60
60
30
70
50
85
50
30
50
30
80
50
2-109
Discrete Power Products –
Max
400
202
375
800
800
360
400
300
500
600
300
630
400
200
300
800
800
300
150
150
800
150
400
400
400
600
700
300
150
300
300
–
–
h
FE
@V
10
10
10
10
CE
1
1
1
5
5
1
1
5
5
1
1
1
1
1
1
5
5
1
1
5
5
5
5
5
5
5
1
1
1
(V) @I
C
100
500
100
100
500
100
0.1
50
50
50
10
50
50
50
10
50
50
10
10
10
2
2
2
2
2
2
2
0
2
2
2
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.25
0.25
0.25
0.65
0.65
0.25
0.25
0.25
0.4
0.6
0.5
0.3
0.3
0.4
0.6
0.5
0.7
0.5
0.5
0.5
0.3
0.4
0.3
0.6
0.6
0.6
0.6
0.3
0.4
0.4
0.5
1
1
@I
V
CE (sat)
1000
1000
C
500
500
300
500
300
300
500
800
100
100
100
100
100
100
10
10
50
50
10
50
50
50
50
50
10
50
10
50
50
50
50
(mA) @I
B
100
100
0.5
0.5
0.5
50
50
30
50
30
30
50
80
10
10
10
10
5
5
1
5
5
5
5
5
5
5
5
1
5
5
5
5
(mA)