EGP30F Fairchild Semiconductor, EGP30F Datasheet - Page 53
EGP30F
Manufacturer Part Number
EGP30F
Description
DIODE FAST GPP 3A 300V DO-201AD
Manufacturer
Fairchild Semiconductor
Specifications of EGP30F
Voltage - Forward (vf) (max) @ If
1.25V @ 3A
Voltage - Dc Reverse (vr) (max)
300V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 300V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP30F
Manufacturer:
VISHAY
Quantity:
150 000
Part Number:
EGP30F
Manufacturer:
VISHAY/威世
Quantity:
20 000
- Current page: 53 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
TO-262 (I
IRFI624B
FQI4N25
IRFI614B
FQI3N25
FQI5N30
FQI3N30
FQI2N30
FQI11N40
IRFI740B
FQI7N40
FQI6N40C
FQI6N40
FQI5N40
FQI3N40
FQI6N45
FQI13N50C
FQI9N50
FQI9N50C
IRFI840B
FQI6N50
FQI5N50C
IRFI830B
FQI5N50
SSI1N50B
FQI12N60C
FQI12N60
FQI10N60C
SSI10N60B
FQI7N60
FQI8N60C
SSI7N60B
FQI6N60C
FQI4N60
FQI5N60C
SSI4N60B
SSI2N60B
SSI1N60B
FQI6N70
FQI7N80
Products
2
PAK) (Continued)
Min. (V)
BV
250
250
250
250
300
300
300
400
400
400
400
400
400
400
450
500
500
500
500
500
500
500
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
700
800
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
1.75
0.48
0.54
1.15
0.48
0.73
0.85
0.65
0.73
1.1
2.2
0.9
2.2
3.7
0.8
1.6
3.4
1.1
0.8
1.3
1.4
1.5
1.8
5.5
0.7
0.8
1.2
1.2
2.2
2.5
2.5
1.5
1.5
12
2
1
1
2
5
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-48
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
13.5
16.5
12.5
4.3
8.1
9.8
5.5
3.7
8.3
5.9
27
41
16
13
10
16
43
28
28
41
17
18
27
13
48
42
44
54
29
28
38
16
15
15
22
30
40
4
6
= 5V
I
D
11.4
10.5
4.1
3.6
2.8
2.8
5.4
3.2
2.1
5.5
4.5
2.5
6.2
5.5
4.5
4.5
1.5
9.5
7.4
7.5
5.5
4.4
4.5
6.2
6.6
10
13
12
7
9
9
2
6
9
8
5
7
4
1
(A)
MOSFETs
P
D
147
134
195
147
135
134
225
180
156
156
142
147
147
125
106
100
100
142
167
49
52
40
45
70
55
40
98
73
85
70
55
98
98
73
73
85
36
54
34
(W)
Related parts for EGP30F
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
3.0 Ampere Glass Passivated High Efficiency Rectifiers
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: