EGP30F Fairchild Semiconductor, EGP30F Datasheet - Page 46
EGP30F
Manufacturer Part Number
EGP30F
Description
DIODE FAST GPP 3A 300V DO-201AD
Manufacturer
Fairchild Semiconductor
Specifications of EGP30F
Voltage - Forward (vf) (max) @ If
1.25V @ 3A
Voltage - Dc Reverse (vr) (max)
300V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 300V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP30F
Manufacturer:
VISHAY
Quantity:
150 000
Part Number:
EGP30F
Manufacturer:
VISHAY/威世
Quantity:
20 000
- Current page: 46 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
TO-220 (Continued)
FDP2532
FDP2552
FQP46N15
HUF75842P3
HUFA75842P3
FDP42AN15A0
FDP2572
FDP2570
FDP120AN15A0
FQP16N15
FQP14N15
FQP9N15
FQP6N15
IRL640A
IRL630A
IRL620A
IRL610A
SSP45N20B
FQP34N20
FQP34N20L
FQP32N20C
IRF650B
HUF75939P3
FDP2670
FQP18N20V2
FQP19N20L
FQP19N20
FQA19N20C
FQP19N20C
IRF640A
IRF640B
FQP10N20C
FQP630
IRF630B
FQP7N20
FQP7N20L
IRF620B
FQP5N20
FQP5N20L
Products
Min. (V)
BV
150
150
150
150
150
150
150
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.016
0.036
0.042
0.042
0.042
0.042
0.056
0.065
0.075
0.075
0.082
0.085
0.125
10V
0.08
0.12
0.16
0.21
0.13
0.14
0.14
0.15
0.17
0.17
0.18
0.36
0.69
0.75
0.4
0.6
0.4
0.4
0.8
1.2
1.2
–
–
–
–
0.024@6V
0.054@6V
0.075@6V
0.06@6V
0.09@6V
0.17@6V
0.18@5V
0.08@5V
0.15@5V
0.78@5V
1.25@5V
R
0.4@5V
0.8@5V
1.5@5V
4.5V
DS(ON)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-41
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Replaced by IRF640B
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
11.2
18.6
10.3
82.5
40.5
40.5
40.5
133
6.5
6.1
6.8
4.8
86
41
85
77
77
30
27
40
23
18
10
40
60
55
95
64
27
20
27
31
45
19
22
12
8
6
= 5V
I
D
45.6
16.4
14.4
19.4
21.8
21.8
6.4
3.3
6.6
6.5
4.5
4.5
79
37
43
43
35
29
22
14
18
35
31
31
28
28
22
19
18
21
19
18
9
9
5
9
9
5
(A)
MOSFETs
P
D
310
150
210
230
230
150
135
108
104
110
176
180
180
156
156
180
140
140
180
139
139
180
93
75
39
93
72
63
52
65
63
69
33
78
63
47
52
–
(W)
Related parts for EGP30F
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
3.0 Ampere Glass Passivated High Efficiency Rectifiers
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: