1N5821 Fairchild Semiconductor, 1N5821 Datasheet
1N5821
Manufacturer Part Number
1N5821
Description
DIODE SCHOTTKY 30V 3A DO-201AD
Manufacturer
Fairchild Semiconductor
Datasheet
1.1N5820.pdf
(3 pages)
Specifications of 1N5821
Voltage - Forward (vf) (max) @ If
500mV @ 3A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
500µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
190pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Schottky Rectifiers
Peak Reverse Voltage
30 V
Forward Continuous Current
3 A
Max Surge Current
80 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1N5821
1N5821FS
1N5821FS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N5821
Manufacturer:
LRC/乐山
Quantity:
20 000
Part Number:
1N5821-E
Manufacturer:
LRC/乐山
Quantity:
20 000
Company:
Part Number:
1N5821-T
Manufacturer:
DIO
Quantity:
1 200
Company:
Part Number:
1N5821-TP
Manufacturer:
Micro Commercial Co
Quantity:
1 882
Company:
Part Number:
1N5821RLG
Manufacturer:
ON
Quantity:
1 626
Part Number:
1N5821RLG
Manufacturer:
VISHAY/威世
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Schottky Rectifiers
Absolute Maximum Ratings*
*
Thermal Characteristics
Electrical Characteristics
Symbol
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
V
I
I
T
T
V
I
C
P
R
F(AV)
FSM
R
Features
•
•
stg
J
RRM
F
T
D
JA
3.0 ampere operation at T
with no thermal runaway.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage
Reverse Current @ rated V
Total Capacitance
Power Dissipation
Thermal Resistance, Junction to Ambient
V
8.3 ms Single Half-Sine-Wave
3/8 " lead length @ T
R
= 4.0 V, f = 1.0 MHz
A
= 95°C
Parameter
Parameter
Parameter
1N5820 - 1N5822
A
R
= 95 C
T
A
@ 3.0 A
@ 9.4 A
T
T
= 25°C unless otherwise noted
A
A
= 100 C
= 25 C
T
A
= 25°C unless otherwise noted
COLOR BAND DENOTES CATHODE
DO-201AD
1N5820
1N5820
475
850
20
-65 to +125
-65 to +125
Device
1N5821
1N5821
Value
Value
190
500
900
3.0
0.5
3.6
80
20
30
28
1N5822
1N5822
525
950
40
1N5820-1N5822, Rev. C
Units
Units
Units
C/W
mV
mV
mA
mA
pF
W
V
A
A
C
C
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Datasheet:
1N5821 Summary of contents
Page 1
... A Parameter = Parameter T = 25°C unless otherwise noted A Parameter @ 3 9 100 C A Value Units 1N5820 1N5821 1N5822 3 -65 to +125 C -65 to +125 C Value Units 3 C/W Device Units 1N5820 1N5821 1N5822 475 500 525 mV 850 900 950 mV 0 190 pF 1N5820-1N5822, Rev. C ...
Page 2
... Figure 4. Reverse Current vs Reverse Voltage 0.1 0 Reverse Voltage, V [V] R Figure 5. Total Capacitance Schottky Rectifiers (continued) º 1N5820 1N5822 1N5821 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage, V [V] F º 125 C J 1N5822 1N5821 º º everse Voltage 100 1N5820-1N5822, Rev ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...