RGP10M Fairchild Semiconductor, RGP10M Datasheet - Page 2

DIODE GPP FAST 1A 1000V DO-41

RGP10M

Manufacturer Part Number
RGP10M
Description
DIODE GPP FAST 1A 1000V DO-41
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RGP10M

Voltage - Forward (vf) (max) @ If
1.3V @ 1A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 1000V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
500ns
Capacitance @ Vr, F
15pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.3 V
Recovery Time
500 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Power Dissipation
3 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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2001 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 3. Forward Voltage Characteristics
Figure 1. Forward Current Derating Curve
0.75
0.25
0.01
0.5
0.1
10
1
0
1
25
0.4
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
50
NONINDUCTIVE
50
NONINDUCTIVE
50V
(approx)
50
0.6
Reverse Recovery Time Characterstic and Test Circuit Diagram
Forward Voltage, V
Lead Temperature [ºC]
75
0.8
DUT
T = 25 C
Pulse Width = 300 s
2% Duty Cycle
50
NONINDUCTIVE
A
100
1
º
OSCILLOSCOPE
(Note 1)
100
125
1.2
F
50
20
10
5
2
1
[V]
1
150
1.4
Pulse
Generator
(Note 2)
Figure 5. Total Capacitance
2
(-)
(+)
Reverse Voltage, V
1.6
175
5
10
Figure 4. Reverse Current vs Reverse Voltage
20
0.01
R
Figure 2. Non-Repetitive Surge Current
0.1
-0.25A
10
+0.5A
30
25
20
15
10
[V]
-1.0A
1
5
0
0
1
0
Percent of Rated Peak Reverse Voltage [%]
50
20
2
100
Number of Cycles at 60Hz
1.0cm
40
trr
5
60
SET TIME BASE FOR
T = 125 C
T = 75 C
10
T = 25 C
A
A
A
5/ 10 ns/ cm
80
º
º
º
20
100
RPG10A - RPG10M, Rev. C
120
50
140
100

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