MMSD914 Fairchild Semiconductor, MMSD914 Datasheet
MMSD914
Manufacturer Part Number
MMSD914
Description
DIODE 100V 200MA SOD123
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMSD914.pdf
(4 pages)
Specifications of MMSD914
Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOD-123
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
1 V @ 0.01 A
Recovery Time
4 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
5 uA
Power Dissipation
0.4 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMSD914
Manufacturer:
FSC
Quantity:
20 000
Part Number:
MMSD914T1
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
MMSD914T1G
Manufacturer:
ON
Quantity:
9 000
Company:
Part Number:
MMSD914T1G
Manufacturer:
ON Semiconductor
Quantity:
500
Company:
Part Number:
MMSD914T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMSD914T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MMSD914T3G
Manufacturer:
ON Semiconductor
Quantity:
15 050
Company:
Part Number:
MMSD914T3G
Manufacturer:
ON
Quantity:
30 000
©2005 Fairchild Semiconductor Corporation
MMSD914 Rev. C
MMSD914
Small Signal Diode
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Electrical Characteristics
V
I
I
T
T
P
R
V
V
I
C
t
V
F(AV)
FSM
R
rr
STG
J
RRM
D
R
F
F(peak)
Symbol
Symbol
Symbol
T
JA
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
Reverse Recovery Time
Peak Forward Recovery Voltage
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
Parameter
Parameter
T
C
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
COLOR BAND DENOTES CATHODE
I
I
I
V
V
V
V
I
R
I
width = 0.1 S, 5kHz - 100kHz rep rate
R
R
F
F
F
R
R
R
R
L
= 10mA
= 10mA, V
= 50mA, Peak square wave pulse
= 5.0 A
= 100 A
= 100
TOP MARKING: 5D
= 20V
= 20V, T
= 75V
= 0V, f = 1.0MHz
SOD123
1
A
Conditions
R
= 150 C
= 6.0V, I
RR
= 1.0mA,
-55 to +150
Value
Value
100
200
150
400
312
1.0
2.0
Min.
100
75
Max.
1.0
5.0
4.0
4.0
2.5
25
50
February 2005
www.fairchildsemi.com
Unit
Unit
mW
mA
C/W
V
A
A
C
C
Units
nA
pF
ns
V
V
V
V
A
A
Related parts for MMSD914
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
MMSD914 Summary of contents
Page 1
... F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr V Peak Forward Recovery Voltage F(peak) ©2005 Fairchild Semiconductor Corporation MMSD914 Rev. C SOD123 COLOR BAND DENOTES CATHODE TOP MARKING 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Conditions ...
Page 2
Typical Characteristics 4.0 ° Ta 3.5 3.0 2.5 2.0 1.5 1 Reverse Current [mA] Figure 7. Reverse Recovery Time vs Reverse Current TRR - 500 400 300 200 ...
Page 3
Typical Characteristics 150 ° Ta 140 130 120 110 Reverse Current, I [uA] R Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA Ta ° 450 400 ...
Page 4
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete MMSD914 Rev. C IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...