MMSD4448 Fairchild Semiconductor, MMSD4448 Datasheet
MMSD4448
Manufacturer Part Number
MMSD4448
Description
DIODE 100V 200MA SOD123
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMSD4448.pdf
(2 pages)
Specifications of MMSD4448
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOD-123
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2005 Fairchild Semiconductor Corporation
MMSD4448 Rev. A
MMSD4448
Small Signal Diode
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
Electrical Characteristics
V
I
I
T
T
P
R
V
V
I
C
t
V
F(AV)
FSM
R
rr
STG
J
RRM
D
R
F
F(peak)
Symbol
Symbol
Symbol
T
JA
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
Reverse Recovery Time
Peak Forward Recovery Voltage
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
Parameter
Parameter
T
C
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
Color Band Denotes Cathode
I
I
I
I
V
V
V
V
I
I
I
rep rate: 5 to 10KHz
R
R
F
F
F
rr
F
R
R
R
R
= 5mA
= 100mA
= 10mA, V
= 50mA, pw = 0.1 s
= 5.0 A
= 100 A
= 1.0mA, R
= 20V
= 20V, T
= 75V
= 0, f = 1.0MHz
Top Marking: 10
SOD123
1
Conditions
A
R
= 150 C
L
= 6.0V,
= 100
-55 to +150
Value
Value
100
200
150
400
312
1.0
2.0
Min.
0.62
100
75
Max.
0.72
1.0
5.0
2.0
4.0
2.5
25
50
www.fairchildsemi.com
Unit
Unit
mW
mA
C/W
June 2005
V
A
A
C
C
Units
nA
pF
ns
V
V
V
V
A
A
Related parts for MMSD4448
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
MMSD4448 Summary of contents
Page 1
... F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr V Peak Forward Recovery Voltage F(peak) ©2005 Fairchild Semiconductor Corporation MMSD4448 Rev. A SOD123 Color Band Denotes Cathode Top Marking 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Conditions ...
Page 2
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete MMSD4448 Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...