ES1F Fairchild Semiconductor, ES1F Datasheet
ES1F
Manufacturer Part Number
ES1F
Description
DIODE FAST 1A 300V SMA
Manufacturer
Fairchild Semiconductor
Datasheet
1.ES1J.pdf
(4 pages)
Specifications of ES1F
Voltage - Forward (vf) (max) @ If
1.3V @ 1A
Voltage - Dc Reverse (vr) (max)
300V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 300V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
300 V
Forward Voltage Drop
1.3 V
Recovery Time
35 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
ES1FTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ES1F-13-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
ES1FL
Manufacturer:
ST/先科
Quantity:
20 000
Company:
Part Number:
ES1FTR-13
Manufacturer:
Microsem
Quantity:
88 000
Company:
Part Number:
ES1FV1(0.5A 1500V FAST)
Manufacturer:
SANKEN
Quantity:
2 010
Company:
Part Number:
ES1FV1(0.5A1500VFAST)
Manufacturer:
SANKEN
Quantity:
1 933
©2007 Fairchild Semiconductor Corporation
ES1F - ES1J Rev. A
ES1F - ES1J
Fast Rectifiers
Features
• For surface mount applications.
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
• Superfast recovery times for high efficiency.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area.
Electrical Characteristics
R
R
Symbol
Symbol
Symbol
θJA
θJL
V
I
T
I
F(AV)
FSM
P
V
RRM
T
T
STG
I
C
R
D
rr
J
F
j
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Lead *
Maximum Forward Voltage @ I
Maximum Reverse Recovery Time
Maximum Reverse Current @ rated V
Typical Junction Capacitance
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave (JEDEC method)
Junction Temperature
Storage Temperature Range
Power Dissipation
I
V
F
R
= 0.5 A, I
= 4.0 V, f = 1.0 MHz
Parameter
Parameter
Parameter
R
= 1.0 A, I
T
C
RR
F
= 25°C unless otherwise noted
= 0.25 A
= 1.0 A
T
a
= 25°C unless otherwise noted
R
Color Band Denotes Cathode
T
T
A
A
= 100°C
SMA(DO-214AC)
= 25°C
1
ES1F
300
10.0
1.3
ES1G
400
-55 to 150
Value
Value
Value
1.47
150
100
1.0
5.0
30
85
35
35
ES1H
500
1.7
8.0
ES1J
600
July 2007
www.fairchildsemi.com
Units
Units
Units
°C/W
°C/W
°C
°C
uA
pF
ns
W
V
A
A
V
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ES1F Summary of contents
Page 1
... Maximum Reverse Recovery Time 0 1 Maximum Reverse Current @ rated Typical Junction Capacitance 4 1.0 MHz R ©2007 Fairchild Semiconductor Corporation ES1F - ES1J Rev. A SMA(DO-214AC) Color Band Denotes Cathode T = 25°C unless otherwise noted a ES1F ES1G 300 400 T = 25°C unless otherwise noted C = 1 25° ...
Page 2
... FORWARD VOLTAGE. (V) FIG.5- TYPICAL JUNCTION CAPACITANCE 8.0 6.0 4.0 2 REVERSE VOLTAGE. (V) ES1F - ES1J Rev. A FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD 5.0 120 130 140 150 1 o FIG.4- TYPICAL REVERSE CHARACTERISTICS 1000 100 10 ES1H-1J 1 0.1 1 ...
Page 3
... Package Dimensions ES1F - ES1J Rev. A SMA / DO - 214AC 3 Dimensions in Millimeters www.fairchildsemi.com ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...