1N4148 Fairchild Semiconductor, 1N4148 Datasheet

1N4148
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1N4148 Summary of contents
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... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol P Power Dissipation D R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2 LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL T =25°C unless otherwise noted a ...
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Electrical Characteristics* Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T 1N916A/B/4448 1N914A/B/4148 t Reverse Recovery Time rr * Non-recurrent square wave PW = 8.3ms Typical Characteristics 160 o Ta=25 C ...
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Typical Characteristics 1 1.4 1.2 1.0 0.8 0 100 Forward Current, I Figure 5. Forward Voltage vs Forward Current 800mA 0.90 0.85 0.80 0. ...
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... FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ ...