S3B Fairchild Semiconductor, S3B Datasheet - Page 2

• Manufacturer Part Number: S3B
• Description: DIODE GPP GEN PURP 3A 100V SMC
• Manufacturer: Fairchild Semiconductor

Specifications of S3B

• Voltage - Forward (vf) (max) @ If: 1.2V @ 3A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.2 V
• Recovery Time: 2500 ns
• Forward Continuous Current: 3 A @ Ta=100C
• Max Surge Current: 100 A
• Reverse Current Ir: 5 uA
• Power Dissipation: 2.6 W
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: S3BFSTR

2001 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 1. Forward Current Derating Curve
3.5
2.5
1.5
0.5
Figure 3. Non-Repetitive Surge Current
120
100
80
60
40
20
4
3
2
1
0
0
50
1
RESISTIVE OR
ON 0.3x 0.3"
(8.0x8.0mm)
SINGLE PHASE
HALF WAVE
60HZ
INDUCTIVE LOAD
P.C.B. MOUNTED
COPPER PAD AREAS
8.3mm Single Half Sine-Wave
JEDEC Method
60
2
70
Number of Cycles at 60Hz
Lead Temperature [ºC]
80
5
90 100 110 120 130 140 150
10
100
20
50
10
5
1
50
Figure 5. Total Capacitance
100
Reverse Voltage, V
5
T = 25 C
J
10
Figure 4. Reverse Current vs Reverse Voltage
º
Figure 2. Forward Voltage Characteristics
0.01
100
100
0.1
0.1
10
R
10
1
1
[V]
0.6
0
50
20
0.7
General Purpose Rectifiers
T = 125 C
A
100
R everse Voltage, V
40
0.8
Forward Voltage, V
º
0.9
60
T = 25 C
Pulse Width = 300 s
2% Duty Cycle
J
80
1
º
T = 25 C
A
F
R
100
1.1
[V]
[V]
º
120
1.2
(continued)
S3A-S3M, Rev. C
140
1.3