MBR0520L Fairchild Semiconductor, MBR0520L Datasheet
MBR0520L
Manufacturer Part Number
MBR0520L
Description
DIODE SCHOTTKY 0.5A 20V SOD-123
Manufacturer
Fairchild Semiconductor
Datasheet
1.MBR0520L.pdf
(3 pages)
Specifications of MBR0520L
Voltage - Forward (vf) (max) @ If
385mV @ 500mA
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
500mA
Current - Reverse Leakage @ Vr
250µA @ 20V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-123
Rectifier Type
Schottky Diode
Configuration
Single
Peak Rep Rev Volt
20V
Avg. Forward Curr (max)
0.5A
Rev Curr
250uA
Peak Non-repetitive Surge Current (max)
5.5A
Forward Voltage
0.385V
Operating Temp Range
-65C to 125C
Package Type
SOD-123
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Product
Schottky Diodes
Peak Reverse Voltage
20 V
Forward Continuous Current
0.5 A
Max Surge Current
5.5 A
Forward Voltage Drop
0.385 V
Maximum Reverse Leakage Current
250 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Compliant
Other names
MBR0520LTR
MBRO520L
MBRO520L
MBRO520L
MBRO520L
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR0520L
Manufacturer:
Fairchild Semiconductor
Quantity:
137 810
Company:
Part Number:
MBR0520L
Manufacturer:
KEC
Quantity:
2 122
Part Number:
MBR0520L
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MBR0520LT1
Manufacturer:
ON
Quantity:
56 000
Part Number:
MBR0520LT1
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MBR0520LT1G
Manufacturer:
ON Semiconductor
Quantity:
137 714
Part Number:
MBR0520LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings*
*
Thermal Characteristics
*
Electrical Characteristics
Schottky Rectifier
Symbol
Symbol
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
FR-4 or FR-5 = 3.5 x 1.5 inches using minimum recommended Land Pads.
Features
•
•
•
V
I
I
T
T
R
R
V
I
F(AV)
FSM
R
stg
j max
RRM
F
0.5 Ampere, low forward voltage, less then 385mV
400 milliwatt Power Dissipation package
Compact surface mount package with the same
footprint as mini-melf
JA
JL
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non Repetitive Peak Forward Current
(Surge applied at rated load conditions half wave, single phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance Junction to Ambient*
Thermal Resistance Junction to Lead
Forward Voltage
Reverse Current
Parameter
Parameter
Parameter
T
MBR0520L
A
= 25°C unless otherwise noted
@ I
@ V
T
A
I
I
I
V
V
V
F
F
F
F
= 25°C unless otherwise noted
R
R
R
R
= 100 mA, T
= 500 mA,
= 500 mA, T
= 100 mA,
= 10 V,
= 10 V, T
= 20 V,
= 20 V, T
A
A
= 100 C
= 100 C
A
A
= 100 C
= 100 C
Color Band Denotes Cathode
Color Band Denotes
Actual Size
SOD123
SOD123
SOD123
Mark: B2
Mark: B4
Mark: B2
Cathode
Mark: B2
-65 to +150
-65 to +125
Value
Value
Value
500
340
150
300
220
385
330
250
5.5
5.0
8.0
20
75
Units
Units
Units
mV
mV
mV
mV
mA
mA
C/W
C/W
mA
µA
µA
V
A
MBR0520L, Rev. B
C
C
Related parts for MBR0520L
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
MBR0520L Summary of contents
Page 1
... T = 100 100 100 SOD123 SOD123 SOD123 Mark: B4 Mark: B2 Cathode Mark: B2 Mark: B2 Value Units 20 V 500 mA 5.5 A -65 to +150 C -65 to +125 C Value Units 340 C/W 150 C/W Value Units 300 mV 220 mV 385 mV 330 mV 75 µA 5.0 mA 250 µA 8.0 mA MBR0520L, Rev. B ...
Page 2
... C 0.0001 0 0.1 0.2 0.3 Forward Voltage, V [V] F Figure 1. Forward Voltage Characteristics 120 110 100 0.1 0.01 0 0.4 0.5 Figure 2. Reverse Current vs Reverse Voltage Reverse Voltage, V [V] R Figure 3. Total Capacitance Schottky Rectifier (continued) o 125 C o 100 Reverse Voltage MBR0520L, Rev. B ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...