S1J Fairchild Semiconductor, S1J Datasheet - Page 2

• Manufacturer Part Number: S1J
• Description: DIODE GPP 1A 600V GEN PURP SMA
• Manufacturer: Fairchild Semiconductor

Specifications of S1J

• Voltage - Forward (vf) (max) @ If: 1.1V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.1 V
• Recovery Time: 1800 ns
• Forward Continuous Current: 1 A @ Ta=100C
• Max Surge Current: 40 A
• Reverse Current Ir: 1 uA
• Power Dissipation: 1.4 W
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: S1J; S1JFSTR

Typical Performance Characteristics
Figure 2. Forward Voltage Characteristics
Figure 1. Forward Current Derating Curve
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Non-Repetitive Surge Current
Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
Figure 6. Thermal Impedance Characteristics
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
S1A - S1M Rev. C3
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