S1B Fairchild Semiconductor, S1B Datasheet

DIODE GEN PURPOSE 100V 1A SMA

S1B

Manufacturer Part Number
S1B
Description
DIODE GEN PURPOSE 100V 1A SMA
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of S1B

Voltage - Forward (vf) (max) @ If
1.1V @ 1A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1µA @ 100V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
1.8µs
Capacitance @ Vr, F
12pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Rectifier Type
Switching Diode
Configuration
Single
Peak Rep Rev Volt
100V
Avg. Forward Curr (max)
1
Rev Curr
1uA
Peak Non-repetitive Surge Current (max)
30A
Forward Voltage
1.1V
Operating Temp Range
-55C to 150C
Package Type
DO-214AC
Rev Recov Time
1800ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Product
Standard Recovery Rectifier
Reverse Voltage
100 V
Forward Voltage Drop
1.1 V
Recovery Time
1800 ns
Forward Continuous Current
1 A @ Ta=100C
Max Surge Current
40 A
Reverse Current Ir
1 uA
Power Dissipation
1.4 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
S1BFSTR

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© 2010 Fairchild Semiconductor Corporation
S1A - S1M Rev. C3
S1A - S1M
General Purpose Rectifiers
Features
• Low profile package.
• Glass passivated junction.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
Symbol
Symbol
V
I
T
R
I
F(AV)
FSM
RRM
P
V
C
STG
T
t
I
θJA
rr
R
D
J
F
T
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient*
Forward Voltage @ 1.0A
Reverse Recovery Time
Reverse Current @ rated V
Total Capacitance
8.3ms Single Half-Sine-Wave
I
V
F
R
=0.5A, I
= 4.0V, f = 1.0MHz
Parameter
Parameter
Parameter
@ T
R
=1.0A, I
T
A
A
= 100°C
= 25°C unless otherwise noted
R
T
A
rr
= 25°C unless otherwise noted
=0.25A
T
T
A
A
=25°C
=125°C
1
1A
1A
50
100
1B
1B
200
1D
1D
-55 to +150
-55 to +150
COLOR BAND DENOTES CATHODE
SMA/DO-214AC
Value
Value
Value
400
1G
1.0
1.4
1G
1.8
1.0
1.1
30
85
50
12
600
1J
1J
800 1000
1K
1K
1M
1M
www.fairchildsemi.com
June 2010
Units
Units
Units
°C/W
µA
µA
°C
°C
µs
pF
W
V
A
A
V

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S1B Summary of contents

Page 1

... Electrical Characteristics Symbol V Forward Voltage @ 1. Reverse Recovery Time rr I =0.5A Reverse Current @ rated Total Capacitance 4.0V 1.0MHz R © 2010 Fairchild Semiconductor Corporation S1A - S1M Rev 25°C unless otherwise noted A Parameter 100°C A Parameter T = 25°C unless otherwise noted A Parameter 1A =1.0A, I =0.25A R ...

Page 2

... Typical Performance Characteristics Figure 1. Forward Current Derating Curve Figure 3. Non-Repetitive Surge Current Figure 5. Total Capacitance © 2010 Fairchild Semiconductor Corporation S1A - S1M Rev. C3 Figure 2. Forward Voltage Characteristics Percent of Rated Peak Reverse Voltage (%) Figure 4. Reverse Current vs Reverse Voltage Figure 6. Thermal Impedance Characteristics 2 www ...

Page 3

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...

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