ISL9K8120P3 Fairchild Semiconductor, ISL9K8120P3 Datasheet - Page 4

• Manufacturer Part Number: ISL9K8120P3
• Description: DIODE DUAL 1200V 8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: Stealth™r

Specifications of ISL9K8120P3

• Voltage - Forward (vf) (max) @ If: 3.3V @ 8A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Reverse Recovery Time (trr): 44ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves (per leg) (Continued)
Figure 7. Reverse Recovery Softness Factor vs
12
11
10
500
400
300
200
100
Figure 9. Junction Capacitance vs Reverse
9
8
7
6
5
4
3
2
100
0.03
0
200
0.1
dI
I
F
F
300
I
= 4A
F
/dt, CURRENT RATE OF CHANGE (A/µs)
= 16A
V
400
R
, REVERSE VOLTAGE (V)
Voltage
dI
500
1
F
/dt
I
F
= 8A
600
8
4
0
6
2
V
700
90
Figure 11. DC Current Derating Curve
R
= 780V, T
10
800
100
C
f = 1MH
= 125
900
T
C
o
, CASE TEMPERATURE (
C
110
Z
1000
100
120
Figure 10. Reverse Recovery Current and Times
Figure 8. Reverse Recovered Charge vs dI
-4.4
-4.8
-5.2
-5.6
-6.0
2000
1800
1600
1400
1200
1000
800
600
400
100
25
130
V
R
o
C)
t
= 780V, T
200
RR
dI
50
140
F
I
F
vs Case Temperature
300
/dt, CURRENT RATE OF CHANGE (A/µs)
T
= 8A, V
I
C
C
RM(REC)
, CASE TEMPERATURE (
= 125
400
R
150
o
75
C
= 780V, dI
500
F
100
600
/dt = 200A/µs
700
o
C)
125
800
ISL9K8120P3 Rev. A
I
I
F
I
F
F
= 16A
= 4A
900
= 8A
150
F
500
400
350
300
450
/dt
1000