ISL9K860P3 Fairchild Semiconductor, ISL9K860P3 Datasheet

ISL9K860P3

Manufacturer Part Number

ISL9K860P3

Description

DIODE DUAL 600V 8A TO-220

Manufacturer

Fairchild Semiconductor

Series

Stealth™r

Datasheet

1.ISL9K860P3.pdf (6 pages)

Specifications of ISL9K860P3

Voltage - Forward (vf) (max) @ If

2.4V @ 8A

Current - Reverse Leakage @ Vr

100µA @ 600V

Current - Average Rectified (io) (per Diode)

Voltage - Dc Reverse (vr) (max)

600V

Reverse Recovery Time (trr)

30ns

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ISL9K860P3

Manufacturer:

FAIRCHILD

Quantity:

12 500

Current page: 1 of 6
Download datasheet (145Kb)

ISL9K860P3

8A, 600V Stealth™ Dual Diode

General Description

The ISL9K860P3 is a Stealth™ dual diode optimized

for low loss performance in high frequency hard

switched applications. The Stealth™ family exhibits low

reverse recovery current (I

recovery under typical operating conditions.

This device is intended for use as a free wheeling or

boost diode in power supplies and other power

switching applications. The low I

reduce loss in switching transistors. The soft recovery

minimizes ringing, expanding the range of conditions

under which the diode may be operated without the use

of additional snubber circuitry. Consider using the

Stealth™ diode with an SMPS IGBT to provide the

most efficient and highest power density design at

lower cost.

Formerly developmental type TA49409.

Device Maximum Ratings (per leg)

Package

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

Symbol

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

F(AV)

, T

FRM

RWM

FSM

RRM

PKG

AVL

STG

CATHODE

(FLANGE)

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current (T

Total Device Current (Both Legs)

Repetitive Peak Surge Current (20kHz Square Wave)

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

Power Dissipation

Avalanche Energy (1A, 40mH)

Operating and Storage Temperature Range

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

JEDEC TO-220AB

RRM

) and exceptionally soft

RRM

and short t

ANODE 2

CATHODE

ANODE 1

Parameter

phase

= 147

= 25°C unless otherwise noted

Features

• Soft Recovery. . . . . . . . . . . . . . . . . . . . t

• Fast Recovery . . . . . . . . . . . . . . . . . . . . t

• Operating Temperature . . . . . . . . . . . . . . . 175

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . 600V

• Avalanche Energy Rated

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

• Snubber Diode

-55 to 175

Ratings

Symbol

600

100

300

260

April 2002

ISL9K860P3 Rev. C

/ t

< 25ns

Units

°C

> 2.5

Related parts for ISL9K860P3

ISL9K860P3 Summary of contents

Page 1

... ISL9K860P3 8A, 600V Stealth™ Dual Diode General Description The ISL9K860P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I ) and exceptionally soft RRM recovery under typical operating conditions. ...

Page 2

... 8A /dt = 200A 390V 125° 8A /dt = 600A 390V 125° Tape Width Quantity - - Min Typ Max T = 25° 100 125° 1 25°C - 2.0 2 125°C - 1.6 2 30V - 30V - 150 - - 2 6.5 - 195 - - 500 - - - 1. ISL9K860P3 Rev. C Units A/µs °C/W °C/W ...

Page 3

... 16A, 8A 200 300 400 500 600 700 800 dI /dt, CURRENT RATE OF CHANGE (A/µs) F and t Curves 390V 125° 16A 200 300 400 500 600 700 800 dI /dt, CURRENT RATE OF CHANGE (A/µ /dt F ISL9K860P3 Rev. C 600 900 1000 900 1000 ...

Page 4

... Figure 10. DC Current Derating Curve - RECTANGULAR PULSE DURATION (s) = 390V 125° 16A 200 300 400 500 600 700 800 dI /dt, CURRENT RATE OF CHANGE (A/µs) F 145 150 155 160 165 CASE TEMPERATURE ( NOTES: DUTY FACTOR PEAK ISL9K860P3 Rev. C 900 1000 /dt F 170 175 1 10 ...

Page 5

... Test Circuit 40mH R < 0 50V 1/2LI [V /( AVL R(AVL) R(AVL IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q1 DUT Figure 14. Avalanche Energy Test Circuit ©2002 Fairchild Semiconductor Corporation CURRENT 0 SENSE + Figure 13 Figure 15. Avalanche Current and Voltage 0. Waveforms and Definitions rr V AVL Waveforms ISL9K860P3 Rev. C ...

Page 6

CROSSVOLT â â â â Rev. H5 ...

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