FFA10U40DNTU Fairchild Semiconductor, FFA10U40DNTU Datasheet
FFA10U40DNTU
Manufacturer Part Number
FFA10U40DNTU
Description
DIODE ULTRA FAST 400V 10A TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet
1.FFA10U40DNTU.pdf
(4 pages)
Specifications of FFA10U40DNTU
Voltage - Forward (vf) (max) @ If
1.4V @ 10A
Current - Reverse Leakage @ Vr
30µA @ 400V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
400V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-3P-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2000 Fairchild Semiconductor International
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
Thermal Characteristics
Electrical Characteristics
* Pulse Test: Pulse Width=300 s, Duty Cycle 2%
Features
• Ultrafast with soft recovery
• Low forward voltage
Applications
• Power switching circuits
• Output rectifiers
• Freewheeling diodes
• Switching mode power supply
V
I
I
T
R
V
I
t
I
Q
W
F(AV)
FSM
RM
rr
rr
J,
RRM
FM
rr
AVL
JC
Symbol
Symbol
Symbol
T
STG
*
*
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Operating Junction and Storage Temperature
Maximum Thermal Resistance, Junction to Case
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
Avalanche Energy
F
=10A, di/dt = 200A/ s)
60Hz Single Half-Sine Wave
@ rated V
I
I
F
F
Parameter
(per diode) T
= 10A
= 10A
Parameter
Parameter
(per diode) T
R
FFA10U40DN
1
C
2
=25 C unless otherwise noted
3
C
=25 C unless otherwise noted
T
T
T
T
@ T
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
C
= 100 C
TO-3P
Min.
1.0
-
-
-
-
-
-
-
1. Anode 2.Cathode 3. Anode
- 65 to +150
Typ.
-
-
-
-
-
-
-
-
Value
Value
400
100
4.0
10
Max.
300
113
1.4
1.3
4.5
30
50
-
Rev. F, September 2000
Units
Units
Units
C/W
mJ
nC
ns
V
A
A
V
A
C
A
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FFA10U40DNTU Summary of contents
Page 1
... I Maximum Reverse Recovery Current rr Q Maximum Reverse Recovery Charge rr (I =10A, di/dt = 200A Avalanche Energy AVL * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2000 Fairchild Semiconductor International FFA10U40DN TO- (per diode) T =25 C unless otherwise noted C Parameter @ T = 100 C C 60Hz Single Half-Sine Wave ...
Page 2
... Reverse Voltage , V Figure 3. Typical Junction Capacitance 100 di/dt [A/ s] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2000 Fairchild Semiconductor International 1000 100 0.1 0.01 0.001 1.5 2.0 [ Typical Capacitance 450 100 100 ...
Page 3
... Package Dimensions ø3.20 0.10 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2000 Fairchild Semiconductor International TO-3P 15.60 0.20 13.60 0.20 9.60 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters Rev. F, September 2000 ...
Page 4
TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...