FFA20U60DNTU Fairchild Semiconductor, FFA20U60DNTU Datasheet

FFA20U60DNTU

Manufacturer Part Number

FFA20U60DNTU

Description

DIODE ULTRA FAST 600V 20A TO-3P

Manufacturer

Fairchild Semiconductor

Datasheet

1.FFA20U60DNTU.pdf (4 pages)

Specifications of FFA20U60DNTU

Voltage - Forward (vf) (max) @ If

2.2V @ 20A

Current - Reverse Leakage @ Vr

10µA @ 600V

Current - Average Rectified (io) (per Diode)

20A

Voltage - Dc Reverse (vr) (max)

600V

Reverse Recovery Time (trr)

90ns

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Through Hole, Radial

Package / Case

TO-3P-3 (Straight Leads)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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ULTRA FAST RECOVERY POWER RECTIFIER

Absolute Maximum Ratings

Thermal Characteristics

Electrical Characteristics

* Pulse Test: Pulse Width=300 s, Duty Cycle 2%

Features

• High voltage and high reliability

• High speed switching

• Low forward voltage

Applications

• General purpose

• Switching mode power supply

• Free-wheeling diode for motor application

• Power switching circuits

F(AV)

FSM

RRM

AVL

Symbol

STG

Peak Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Surge Current

Operating Junction and Storage Temperature

Maximum Thermal Resistance, Junction to Case

Maximum Instantaneous Forward Voltage

Maximum Instantaneous Reverse Current

Maximum Reverse Recovery Time

Maximum Reverse Recovery Current

Maximum Reverse Recovery Charge

Avalanche Energy

=20A, di/dt = 200A/ s)

60Hz Single Half-Sine Wave

@ rated V

= 20A

Parameter

(per diode) T

Parameter

(per diode) T

FFA20U60DN

1 2 3

=25 C unless otherwise noted

@ T

= 25 C

= 100 C

= 25 C

= 100 C

TO-3P

Min.

1.0

1. Anode 2.Cathode 3. Anode

- 65 to +150

Typ.

Value

1.25

600

120

Max

100

360

2.2

2.0

Units

Rev. A, March 2002

C/W

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FFA20U60DNTU Summary of contents

Page 1

... Maximum Reverse Recovery Current rr Q Maximum Reverse Recovery Charge rr (I =20A, di/dt = 200A Avalanche Energy AVL * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation FFA20U60DN TO- (per diode) T =25 C unless otherwise noted C Parameter @ T = 100 C C 60Hz Single Half-Sine Wave Parameter ...

Page 2

... Figure 1. Typical Forward Voltage Drop vs. Forward Current 200 150 100 50 1 0.1 1 Reverse Voltage , V Figure 3. Typical Junction Capacitance 100 di/dt [A/ s] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2002 Fairchild Semiconductor Corporation 1000 100 0.1 0.01 1E-3 2.0 2.5 3.0 [V] F 100 Typical Capacitance 178 ...

Page 3

... Package Dimensions ø3.20 0.10 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2002 Fairchild Semiconductor Corporation TO-3P 15.60 0.20 13.60 0.20 9.60 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters Rev. A, March 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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