FFA10U120DNTU Fairchild Semiconductor, FFA10U120DNTU Datasheet

FFA10U120DNTU

Manufacturer Part Number

FFA10U120DNTU

Description

DIODE ULTRA FAST 1200V 10A TO-3P

Manufacturer

Fairchild Semiconductor

Datasheet

1.FFA10U120DNTU.pdf (4 pages)

Specifications of FFA10U120DNTU

Voltage - Forward (vf) (max) @ If

3.5V @ 10A

Current - Reverse Leakage @ Vr

10µA @ 1200V

Current - Average Rectified (io) (per Diode)

10A

Voltage - Dc Reverse (vr) (max)

1200V (1.2kV)

Reverse Recovery Time (trr)

100ns

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Through Hole, Radial

Package / Case

TO-3P-3 (Straight Leads)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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ULTRA FAST RECOVERY POWER RECTIFIER

Absolute Maximum Ratings

Thermal Characteristics

Electrical Characteristics

* Pulse Test: Pulse Width=300 s, Duty Cycle 2%

Features

• High voltage and high reliability

• High speed switching

• Low forward voltage

Applications

• General purpose

• Switching mode power supply

• Free-wheeling diode for motor application

• Power switching circuits

F(AV)

FSM

RRM

AVL

Symbol

STG

Peak Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Surge Current

Operating Junction and Storage Temperature

Maximum Thermal Resistance, Junction to Case

Maximum Instantaneous Forward Voltage

Maximum Instantaneous Reverse Current

Maximum Reverse Recovery Time

Maximum Reverse Recovery Current

Maximum Reverse Recovery Charge

Avalanche Energy

=10A, di/dt = 200A/ s)

60Hz Single Half-Sine Wave

@ rated V

Parameter

(per diode) T

= 10A

Parameter

FFA10U120DN

(per diode) T

=25 C unless otherwise noted

@ T

= 25 C

= 100 C

= 25 C

= 100 C

TO-3P

Min.

1.0

1. Anode 2.Cathode 3. Anode

- 65 to +150

Typ.

Value

1200

1.5

Max.

800

100

360

3.5

3.2

Rev. F, September 2000

Units

C/W

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FFA10U120DNTU Summary of contents

Page 1

... I Maximum Reverse Recovery Current rr Q Maximum Reverse Recovery Charge rr (I =10A, di/dt = 200A Avalanche Energy AVL * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2000 Fairchild Semiconductor International FFA10U120DN TO- (per diode) T =25 C unless otherwise noted C Parameter @ T = 100 C C 60Hz Single Half-Sine Wave ...

Page 2

... Reverse Voltage , V Figure 3. Typical Junction Capacitance 100 100 di/dt [A/ s] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2000 Fairchild Semiconductor International 1000 100 0.1 0.01 0.001 [V] F Figure 2. Typical Reverse Current 140 Typical Capacitance 164 pF 120 100 100 10 100 ...

Page 3

... Package Dimensions ø3.20 0.10 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2000 Fairchild Semiconductor International TO-3P 15.60 0.20 13.60 0.20 9.60 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters Rev. F, September 2000 ...

Page 4

TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...

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