BLF872 NXP Semiconductors, BLF872 Datasheet - Page 5
BLF872
Manufacturer Part Number
BLF872
Description
RF MOSFET Small Signal RF LDMOS 300W UHF
Manufacturer
NXP Semiconductors
Datasheet
1.BLF872112.pdf
(16 pages)
Specifications of BLF872
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 13 V
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
LDMOST-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF872,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF872
Manufacturer:
COMNAV
Quantity:
1 200
Part Number:
BLF872
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
BLF872_1
Product data sheet
Fig 2. CW power gain G
Fig 3. 2-tone power gain G
(dB)
G
p
16
14
12
10
V
typical values
V
I
distortion IMD as a function of average output
power P
Dq
0
DS
DS
= 2
= 32 V; f = 860 MHz; I
= 32 V; f
0.9 A; T
50
L(AV)
1
= 860 MHz; f
; typical values
h
100
= 25 C.
p
IMD3
IMD5
, drain efficiency
G
p
p
and intermodulation
Dq
150
2
= 860.1 MHz;
= 2
(dB)
G
p
16
14
12
10
0.9 A; T
0
200
P
001aad745
L(AV)
h
(W)
Rev. 01 — 20 February 2006
= 25 C.
D
250
100
and power added efficiency
0
20
40
60
(dBc)
G
IMD
D
p
add
200
Fig 4. 2-tone power gain G
(dB)
G
p
16
14
12
10
300
V
I
power added efficiency
average output power P
Dq
0
DS
P
001aad744
= 2
L
= 32 V; f
(W)
0.9 A; T
50
400
add
1
60
40
20
0
D
= 860 MHz; f
,
(%)
as a function of output power P
h
add
100
= 25 C.
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
G
add
D
p
p
, drain efficiency
150
2
L(AV)
= 860.1 MHz;
add
; typical values
as a function of
200
P
001aad746
BLF872
L(AV)
(W)
250
D
60
40
20
0
D
and
(%)
,
5 of 16
add
L
;