BLF872 NXP Semiconductors, BLF872 Datasheet - Page 4

RF MOSFET Small Signal RF LDMOS 300W UHF

BLF872

Manufacturer Part Number
BLF872
Description
RF MOSFET Small Signal RF LDMOS 300W UHF
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF872

Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 13 V
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
LDMOST-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF872,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF872
Manufacturer:
COMNAV
Quantity:
1 200
Part Number:
BLF872
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
7. Application information
Table 7:
T
[1]
BLF872_1
Product data sheet
Mode of operation
2-tone, class AB
DVB-T (8K OFDM)
h
= 25 C unless otherwise specified.
Sync. compression: input sync.
RF performance in a common-source 860 MHz narrowband test circuit
f
(MHz)
f
f
858
1
2
Fig 1. Output capacitance C
= 860;
= 860.1
33 %, output sync. 27 %.
V
per section; capacitance value without internal matching
GS
[1]
= 0 V; f = 1 MHz.
V
(V)
32
32
DS
C
Rev. 01 — 20 February 2006
(pF)
oss
200
150
100
I
(A)
2
2
Dq
50
0
0
0.9
0.9
oss
as a function of drain-source voltage V
10
P
(W)
300
-
L(PEP)
20
P
(W)
-
70
L(AV)
30
G
(dB)
> 14
> 14
40
p
001aad743
V
DS
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
(V)
50
(%)
> 40
> 26
D
DS
IMD3
(dBc)
; typical values
BLF872
25
25
(dB)
-
G
1
4 of 16
p

Related parts for BLF872