BLF872 NXP Semiconductors, BLF872 Datasheet - Page 4
BLF872
Manufacturer Part Number
BLF872
Description
RF MOSFET Small Signal RF LDMOS 300W UHF
Manufacturer
NXP Semiconductors
Datasheet
1.BLF872112.pdf
(16 pages)
Specifications of BLF872
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 13 V
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
LDMOST-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF872,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF872
Manufacturer:
COMNAV
Quantity:
1 200
Part Number:
BLF872
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
7. Application information
Table 7:
T
[1]
BLF872_1
Product data sheet
Mode of operation
2-tone, class AB
DVB-T (8K OFDM)
h
= 25 C unless otherwise specified.
Sync. compression: input sync.
RF performance in a common-source 860 MHz narrowband test circuit
f
(MHz)
f
f
858
1
2
Fig 1. Output capacitance C
= 860;
= 860.1
33 %, output sync. 27 %.
V
per section; capacitance value without internal matching
GS
[1]
= 0 V; f = 1 MHz.
V
(V)
32
32
DS
C
Rev. 01 — 20 February 2006
(pF)
oss
200
150
100
I
(A)
2
2
Dq
50
0
0
0.9
0.9
oss
as a function of drain-source voltage V
10
P
(W)
300
-
L(PEP)
20
P
(W)
-
70
L(AV)
30
G
(dB)
> 14
> 14
40
p
001aad743
V
DS
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
(V)
50
(%)
> 40
> 26
D
DS
IMD3
(dBc)
; typical values
BLF872
25
25
(dB)
-
G
1
4 of 16
p