BLF872 NXP Semiconductors, BLF872 Datasheet - Page 2

• Manufacturer Part Number: BLF872
• Description: RF MOSFET Small Signal RF LDMOS 300W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF872

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF872,112

Philips Semiconductors
2. Pinning information
3. Ordering information
BLF872_1
Product data sheet
1.3 Applications
1.4 Quick reference data
Table 1:
Typical RF performance at V
test circuit.
[1]
[2]
[3]
Table 2:
[1]
Table 3:
Mode of operation
CW, class AB
2-tone, class AB
PAL BG
DVB-T (8K OFDM)
Description
drain 1
drain 2
gate 1
gate 2
source
Type number
BLF872
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
T
Black video signal, sync expansion: input sync = 33 %; output sync
Measured dBc at 4.3 MHz from center frequency.
Connected to flange.
h
is the heatsink temperature.
[1]
Quick reference data
Pinning
Ordering information
Package
Name
-
f
(MHz)
860
f
f
860 (ch69)
858
1
2
Rev. 01 — 20 February 2006
= 860;
= 860.1
Pin
1
2
3
4
5
DS
Description
flanged LDMOST ceramic package; 2 mounting holes; 4
leads
= 32 V and T
P
(W)
300
-
300 (peak sync.)
-
L
h
= 25 C in a common-source narrowband 860 MHz
[2]
[1]
Simplified outline
P
(W)
-
300
-
-
L(PEP)
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
27 %.
P
(W)
-
-
-
70
L(AV)
1
3
G
(dB)
14
15
15
15
p
2
4
BLF872
(%)
55
42
42
30
D
Version
SOT800-1
5
IMD3
(dBc)
-
-
28
28
2 of 16
[3]