BLF872 NXP Semiconductors, BLF872 Datasheet - Page 8

• Manufacturer Part Number: BLF872
• Description: RF MOSFET Small Signal RF LDMOS 300W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF872

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF872,112

Philips Semiconductors
8. Test information
Table 8:
For test circuit, see
BLF872_1
Product data sheet
Component
B1, B2 balun
C1
C2
C3, C5
C4
C6, C7
C8
C9, C10
C11, C12
C13, C14
Fig 9. BLF872 electromigration (I
(10) T
(11) T
Years
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
10
10
10
10
10
10
10
7
6
5
4
3
2
TTF; 0.1 % failure fraction; best estimate values.
0
j
j
j
j
j
j
j
j
j
j
j
= 100 C
= 110 C
= 120 C
= 130 C
= 140 C
= 150 C
= 160 C
= 170 C
= 180 C
= 190 C
= 200 C
List of components
7.3 Reliability
Description
semi rigid coax
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Figure
(7)
10,
11
4
(8)
and 12.
(1)
D
(9)
, total device)
(2)
(10)
(3)
Rev. 01 — 20 February 2006
(11)
8
(4)
(5)
Value
25
12 pF
10 pF
5.6 pF
6.8 pF
2.0 pF
18 pF
0.5 pF
100 pF
100 pF
(6)
12
[1]
[1]
[1]
[1]
[2]
[1]
[2]
[1]
[2]
Remarks
EZ90-25-TP
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
16
I
D
(A)
001aad751
BLF872
20
8 of 16