BLF872 NXP Semiconductors, BLF872 Datasheet - Page 7

• Manufacturer Part Number: BLF872
• Description: RF MOSFET Small Signal RF LDMOS 300W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF872

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF872,112

Philips Semiconductors
BLF872_1
Product data sheet
Fig 7. Analog TV (black video signal) peak sync
(W)
P
300
200
100
0
400
V
Black video signal, sync expansion:
input sync = 33 %; output sync
output power P
power P
DS
= 32 V; I
500
L(AV)
7.1 Broadband operation data
7.2 Ruggedness in class-AB operation
Dq
as a function of frequency f
= 2
Measured in a common-source broadband (470 MHz to 860 MHz) test circuit.
The BLF872 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: V
power.
Measured in a common-source broadband (470 MHz to 860 MHz) test circuit.
600
o(sync)M
P
o(sync)M
P
0.9 A; T
L(AV)
700
and average output
h
= 25 C.
27 %.
800
001aad749
f (MHz)
Rev. 01 — 20 February 2006
900
Fig 8. Analog TV (black video signal) power gain G
(dB)
G
p
20
15
10
5
0
400
V
Black video signal, sync expansion:
input sync = 33 %; output sync
and drain efficiency
frequency f
DS
= 32 V; I
500
DS
Dq
= 2
= 32 V; f = 860 MHz at rated
600
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
G
0.9 A; T
D
p
D
700
as a function of
h
= 25 C.
27 %.
800
001aad750
BLF872
f (MHz)
900
80
60
40
20
0
(%)
D
7 of 16
p