BLF888 NXP Semiconductors, BLF888 Datasheet - Page 7
![RF MOSFET Small Signal 500W, 470-860MHz](/photos/41/59/415998/sot979a_3d_sml.gif)
BLF888
Manufacturer Part Number
BLF888
Description
RF MOSFET Small Signal 500W, 470-860MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF888.pdf
(17 pages)
Specifications of BLF888
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.105 Ohms
Drain-source Breakdown Voltage
104 V
Gate-source Breakdown Voltage
11 V
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934062101112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF888A
Manufacturer:
XYSEMI
Quantity:
12 000
Part Number:
BLF888A
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BLF888AS
Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
BLF888
Product data sheet
Fig 8.
PAR
(dB)
9.5
8.5
7.5
6.5
5.5
400
P
common source broadband test circuit as described in
Section
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
L(AV)
= 110 W; V
7.2.2 DVB-T
500
8.
7.3 Impedance information
PAR
η
D
Table 8.
Simulated Z
600
f
MHz
300
325
350
375
400
425
450
475
500
DS
Fig 10. Definition of transistor impedance
= 50 V; I
700
Dq
i
Typical push-pull impedance
and Z
= 1.3 A; measured in a
800
All information provided in this document is subject to legal disclaimers.
001aak647
L
f (MHz)
device impedance; impedance info at V
900
Rev. 5 — 21 January 2011
50
40
30
20
10
(%)
η
D
Z
1.018 j1.350
1.045 j1.022
1.076 j0.722
1.110 j0.444
1.148 j0.183
1.190 + j0.064
1.238 + j0.299
1.291 + j0.526
1.351 + j0.746
i
Fig 9.
Z
i
(dB)
G
p
22
18
14
10
gate
6
400
P
common source broadband test circuit as described in
Section
DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
L(AV)
001aai086
drain
= 110 W; V
500
8.
Z
L
IMD
DS
G
p
= 50 V and P
shldr
600
DS
UHF power LDMOS transistor
= 50 V; I
Z
5.565 + j0.747
5.435 + j0.752
5.303 + j0.746
5.167 + j0.730
5.030 + j0.704
4.892 + j0.668
4.754 + j0.622
4.617 + j0.567
4.481 + j0.504
L
700
Dq
L(PEP)
= 1.3 A; measured in a
800
© NXP B.V. 2011. All rights reserved.
001aak648
BLF888
f (MHz)
= 600 W (DVB-T).
900
−10
−20
−30
−40
−50
IMD
(dB)
7 of 17
shldr