BLF888 NXP Semiconductors, BLF888 Datasheet - Page 4

• Manufacturer Part Number: BLF888
• Description: RF MOSFET Small Signal 500W, 470-860MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF888

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.105 Ohms
• Drain-source Breakdown Voltage: 104 V
• Gate-source Breakdown Voltage: 11 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062101112

NXP Semiconductors
Table 7.
T
[1]
[2]
BLF888
Product data sheet
Symbol

IMD
PAR
h
D
= 25
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
shldr

C unless otherwise specified.
RF characteristics
Parameter
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
6.1 Ruggedness in class-AB operation
The BLF888 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: V
power. Ruggedness is measured in the application circuit as described in
Fig 1.
…continued
V
Output capacitance as a function of drain-source voltage; typical values per
section; capacitance value without internal matching
GS
= 0 V; f = 1 MHz.
All information provided in this document is subject to legal disclaimers.
C
(pF)
oss
Rev. 5 — 21 January 2011
250
200
150
100
50
0
Conditions
20
40
DS
V
= 50 V; f = 860 MHz at rated
DS
001aaj274
(V)
UHF power LDMOS transistor
[1]
[2]
60
Min
28
-
-
Typ
31
31
8.3
© NXP B.V. 2011. All rights reserved.
BLF888
Section
Max
-
28
-
8.
Unit
%
dBc
dB
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