BLF888 NXP Semiconductors, BLF888 Datasheet - Page 5

• Manufacturer Part Number: BLF888
• Description: RF MOSFET Small Signal 500W, 470-860MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF888

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.105 Ohms
• Drain-source Breakdown Voltage: 104 V
• Gate-source Breakdown Voltage: 11 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062101112

NXP Semiconductors
7. Application information
BLF888
Product data sheet
Fig 2.
(dB)
G
p
22
20
18
16
14
12
10
0
V
narrowband 860 MHz test circuit.
2-Tone power gain and drain efficiency as
function of load power; typical values
DS
= 50 V; I
7.1.1 2-Tone
η
G
D
p
7.1 Narrowband RF figures
100
Dq
= 1.3 A; measured in a common source
200
300
All information provided in this document is subject to legal disclaimers.
P
001aak641
L
(W)
400
Rev. 5 — 21 January 2011
60
50
40
30
20
10
0
(%)
η
D
Fig 3.
(dB)
G
p
22
20
18
16
14
12
10
0
V
narrowband 860 MHz test circuit.
2-Tone power gain and third order
intermodulation distortion as function of
load power; typical values
DS
= 50 V; I
IMD3
G
p
100
Dq
= 1.3 A; measured in a common source
UHF power LDMOS transistor
200
300
© NXP B.V. 2011. All rights reserved.
P
001aak642
BLF888
L
(W)
400
0
−10
−20
−30
−40
−50
−60
(dBc)
IMD3
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