BLF6G27-45 NXP Semiconductors, BLF6G27-45 Datasheet - Page 7

• Manufacturer Part Number: BLF6G27-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-45,112

NXP Semiconductors
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Fig 7.
Fig 9.
(dB)
G
p
19
18
17
16
15
14
2500
V
PAR = 9.7 dB at 0.01 % probability;
instantaneous bandwidth = 30 kHz.
Power gain and drain efficiency as functions of
frequency; typical values
V
Power gain and input return loss as functions of frequency
DS
DS
= 28 V; I
= 28 V; I
7.5 Single carrier N-CDMA broadband performance at 7 W average
2550
Dq
Dq
= 350 mA; single carrier N-CDMA;
= 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz.
2600
(dB)
G
p
2650
19
18
17
16
15
2500
G
f (MHz)
D
001aah412
p
Rev. 03 — 15 December 2008
2700
2550
27
26
25
24
23
22
(%)
D
RL
G
BLF6G27-45; BLF6G27S-45
p
in
2600
Fig 8.
ACPR
(dBc)
(1) Low frequency component
(2) High frequency component
40
50
60
70
2650
2500
V
PAR = 9.7 dB at 0.01 % probability;
instantaneous bandwidth = 30 kHz.
Adjacent channel power ratio as function of
frequency; typical values
DS
f (MHz)
001aah417
= 28 V; I
(1)
(2)
(1)
(2)
(1)
(2)
2700
2550
0
Dq
4
8
12
16
RL
(dB)
WiMAX power LDMOS transistor
= 350 mA; single carrier N-CDMA;
in
2600
2650
© NXP B.V. 2008. All rights reserved.
ACPR
ACPR
ACPR
f (MHz)
001aah413
1500k
1980k
885k
2700
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