BLF6G27-45 NXP Semiconductors, BLF6G27-45 Datasheet - Page 2

• Manufacturer Part Number: BLF6G27-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-45,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G27-45_BLF6G27S-45_3
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G27-45 (SOT608A)
1
2
3
BLF6G27S-45 (SOT608B)
1
2
3
Type number
BLF6G27-45
BLF6G27S-45
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
-
Rev. 03 — 15 December 2008
Description
flanged ceramic package; 2 mounting holes; 2 leads
ceramic earless flanged package; 2 leads
BLF6G27-45; BLF6G27S-45
Conditions
[1]
[1]
Simplified outline
WiMAX power LDMOS transistor
1
2
1
2
3
3
Graphic symbol
Min
-
-
-
© NXP B.V. 2008. All rights reserved.
0.5
65
2
2
Max
65
+13
20
+150
200
sym112
sym112
Version
SOT608A
SOT608B
1
3
1
3
2 of 16
Unit
V
V
A
C
C