BLF6G27-10 NXP Semiconductors
BLF6G27-10
Manufacturer Part Number
BLF6G27-10
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Specifications of BLF6G27-10
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.256 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
3.5 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G27-10,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF6G27-10
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLF6G27-10G
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLF6G27-10G
Manufacturer:
AUO
Quantity:
1 012
Company:
Part Number:
BLF6G27-10G
Manufacturer:
NXP
Quantity:
33
Part Number:
BLF6G27-10G
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BLF6G27-10G,118
Manufacturer:
ELPIDA
Quantity:
106
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