BLF6G27-45 NXP Semiconductors, BLF6G27-45 Datasheet - Page 3

• Manufacturer Part Number: BLF6G27-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-45,112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G27-45_BLF6G27S-45_3
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh
codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; channel bandwidth = 1.23 MHz;
f = 2700 MHz; RF performance at V
specified; in a class-AB production circuit.
[1]
The BLF6G27-45 and BLF6G27S-45 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
C
Symbol
P
G
RL
ACPR
ACPR
DSS
DSX
GSS
j
fs
DS
D
(BR)DSS
GS(th)
L(AV)
th(j-case)
DS(on)
rs
p
= 25 C per section; unless otherwise specified.
in
Measured within 30 kHz bandwidth.
= 28 V; I
885k
1980k
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Thermal characteristics
Characteristics
Application information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
adjacent channel power ratio (1980 kHz)
Dq
Parameter
thermal resistance from
junction to case
= 350 mA; P
Rev. 03 — 15 December 2008
L
= 45 W (CW); f = 2600 MHz.
BLF6G27-45; BLF6G27S-45
DS
= 28 V; I
Conditions
T
P
case
L
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 34 W (CW)
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
= 2.1 A
= 80 C;
Dq
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
= 350 mA; T
GS(th)
GS(th)
D
DS
DS
D
D
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
Conditions
P
P
P
P
P
= 60 mA
= 2.5 A
Type
BLF6G27-45
BLF6G27S-45
= 28 V
= 28 V;
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
= 0 V
WiMAX power LDMOS transistor
case
= 7 W
= 7 W
= 7 W
= 7 W
= 7 W
= 25 C; unless otherwise
Min
65
1.4
-
8.8
-
-
-
-
[1]
[1]
Min Typ Max Unit
-
16.5 18
-
22
-
-
Typ
-
1.9
-
10.4
-
4.3
0.24
1.1
© NXP B.V. 2008. All rights reserved.
Typ
1.7
1.7
7
24
10
49
64
Max
-
2.4
1.4
-
140
-
0.385
-
-
-
-
5
46
61
Unit
K/W
K/W
3 of 16
W
dB
dB
%
dBc
dBc
Unit
V
V
A
nA
S
pF
A