BLF6G27-45 NXP Semiconductors, BLF6G27-45 Datasheet - Page 10

• Manufacturer Part Number: BLF6G27-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-45,112

NXP Semiconductors
Table 8.
For test circuit, see
[1]
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Component
C1
C2
C3, C4, C7, C8
C5, C10, C11, C12, C13 multilayer ceramic chip capacitor 4.7 F
C6
C9
C14
L1
R1
R2
Q1
Fig 13. Component layout for 2500 MHz to 2700 MHz test circuit
American Technical Ceramics type 100B or capacitor of same quality.
V
GG
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
See
List of components
Table 8
C1
Figure 12
for list of components.
C6
Description
multilayer ceramic chip capacitor 0.3 pF
multilayer ceramic chip capacitor 0.5 pF
multilayer ceramic chip capacitor 11 pF
tantalum capacitor
multilayer ceramic chip capacitor 8.2 pF
electrolytic capacitor
ferrite SMD bead
resistor
resistor
BLF6G27-45 or BLF6G27S-45
C5
and
C2
BLF6G27-45
Figure
Input-Rev3
short (0 )
C3
13.
C4
Rev. 03 — 15 December 2008
R1
Q1
BLF6G27-45; BLF6G27S-45
Value
10 F; 35 V
470 F; 63 V
-
22
12
-
C7
C8
C10
C12
[1]
[1]
[1]
C9
Remarks
C4532X7R1H475M
Kemet (Farnell)
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
package 0603
package 1206
C11
C13
WiMAX power LDMOS transistor
r
= 3.5 and thickness = 0.76 mm.
Output-Rev3
BLF6G27-45
C14
L1
© NXP B.V. 2008. All rights reserved.
R2
001aah418
V
DD
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