BLF6G27-45 NXP Semiconductors, BLF6G27-45 Datasheet - Page 14

• Manufacturer Part Number: BLF6G27-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-45,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Document ID
BLF6G27-45_BLF6G27S-45_3 20081215
Modifications:
BLF6G27-45_BLF6G27S-45_2 20080207
BLF6G27-45_BLF6G27S-45_1 20080129
Revision history
Table 10.
Acronym
CCDF
CW
LDMOS
N-CDMA
PAR
RF
SMD
VSWR
WiMAX
Release date Data sheet status
•
Abbreviations
Changed the maximum junction temperature in
Description
Complementary Cumulative Distribution Function
Continuous Wave
Laterally Diffused Metal-Oxide Semiconductor
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Worldwide Interoperability for Microwave Access
Rev. 03 — 15 December 2008
Product data sheet
Preliminary data sheet -
Preliminary data sheet -
BLF6G27-45; BLF6G27S-45
Change notice Supersedes
-
WiMAX power LDMOS transistor
Table 4 on page
BLF6G27-45_BLF6G27S-45_2
BLF6G27-45_BLF6G27S-45_1
-
2.
© NXP B.V. 2008. All rights reserved.
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