BF1207 T/R NXP Semiconductors, BF1207 T/R Datasheet - Page 8

• Manufacturer Part Number: BF1207 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1207 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1207,115

Philips Semiconductors
9397 750 14955
Product data sheet
Fig 6. Amplifier A: forward transfer admittance as a
Fig 8. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values
(mS)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
y
fs
40
30
20
10
0
V
function of drain current; typical values
V
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(A)
G2-S
(7)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 4 V, T
= 5 V; T
8
(6)
j
j
= 25 C, R
= 25 C.
16
(5)
G1(B)
(mA)
= 68 k (connected to ground); see
I
D
(4)
20
16
12
24
8
4
0
0
I
001aac884
D
(mA)
(3)
(1)
(2)
1
32
Rev. 01 — 28 July 2005
2
Fig 7. Amplifier A: drain current as a function of V
3
(mA)
(1) R
(2) R
(3) R
(4) R
(5) R
(6) R
(7) R
I
D
Figure
25
20
15
10
5
0
V
and V
0
G1(A)
G1(A)
G1(A)
G1(A)
G1(A)
G1(A)
G1(A)
G2-S
4
V
001aac886
3.
supply
= 4 V; T
= 39 k .
= 47 k .
= 68 k .
= 82 k .
= 100 k .
= 120 k .
= 150 k .
GG
(V)
; typical values
5
Dual N-channel dual gate MOSFET
j
= 25 C.
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4
V
GG
001aac885
V
BF1207
(1)
(2)
(3)
(4)
(5)
(6)
(7)
DS
(V)
6
8 of 22
DS