BF1207 T/R NXP Semiconductors, BF1207 T/R Datasheet - Page 4

• Manufacturer Part Number: BF1207 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1207 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1207,115

Philips Semiconductors
6. Thermal characteristics
7. Static characteristics
Table 7:
T
9397 750 14955
Product data sheet
Symbol
Per MOSFET; unless otherwise specified
V
V
V
V
V
V
V
I
DSX
j
(BR)DSS
(BR)G1-SS
(BR)G2-SS
F(S-G1)
F(S-G2)
G1-S(th)
G2-S(th)
= 25 C.
Static characteristics
Parameter
drain-source breakdown voltage
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
Table 6:
Symbol
R
Fig 1. Power derating curve
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
(mW)
P
tot
Conditions
V
V
V
V
V
V
V
V
250
200
150
100
Rev. 01 — 28 July 2005
50
G1-S
GS
GS
G2-S
G1-S
DS
DS
G2-S
0
amplifier A
amplifier B
amplifier A
amplifier B
0
= V
= V
= 5 V; V
= 5 V; V
= V
= V
= V
= 4 V; V
DS
DS
G2-S
DS
DS
= 0 V; I
= 0 V; I
= 0 V; I
= 0 V; I
G2-S
G1-S
50
= 0 V; I
DS
= 4 V; I
= 5 V; I
= 5 V; R
G1-S
G2-S
S-G1
S-G2
D
100
= 10 mA
= 10 mA
= 10 A
Conditions
D
D
= 10 mA
= 10 mA
G1
= 100 A
= 100 A
= 68 k
Dual N-channel dual gate MOSFET
150
T
001aac741
sp
( C)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
200
[1]
[2]
Min
6
6
6
6
0.5
0.5
0.3
0.4
13
9
Typ
240
-
-
Typ
-
-
-
-
-
-
-
-
BF1207
Max Unit
-
-
10
10
1.5
1.5
1.0
1.0
23
19
Unit
K/W
4 of 22
V
V
V
V
V
V
V
V
mA
mA