BF1207 T/R NXP Semiconductors, BF1207 T/R Datasheet - Page 17

• Manufacturer Part Number: BF1207 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1207 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1207,115

Philips Semiconductors
9397 750 14955
Product data sheet
8.2.2 Scattering parameters for amplifier B
Table 11:
V
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1000
DS(B)
= 5 V; V
s
Magnitude
(ratio)
0.993
0.992
0.987
0.979
0.969
0.957
0.943
0.927
0.907
0.885
0.858
11
Scattering parameters for amplifier B
G2-S
= 4 V; I
Angle
(deg)
3.018 3.07
6.186 3.07
12.43 3.09
18.60 3.02
24.62 2.99
30.72 2.95
36.71 2.90
42.77 2.86
48.91 2.79
54.77 2.736
61.01 2.675
Rev. 01 — 28 July 2005
D(B)
= 14 mA; V
s
Magnitude
(ratio)
21
DS(A)
Angle
(deg)
176.04 0.0004
172.05 0.0011
164.13 0.0024
156.28 0.0036
148.48 0.0046
140.69 0.0056
132.87 0.0065
125.21 0.0074
117.22 0.0082
109.29 0.0086
101.18 0.0092
= 0 V; V
s
Magnitude
(ratio)
G1-S(A)
12
Dual N-channel dual gate MOSFET
= 0 V; T
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Angle
(deg)
95.97
90.33
85.03
82.94
81.97
81.03
79.77
79.04
79.42
75.47
73.48
amb
= 25 C; typical values.
s
Magnitude
(ratio)
0.991
0.990
0.988
0.986
0.983
0.980
0.977
0.973
0.969
0.964
0.958
22
BF1207
Angle
(deg)
17 of 22
1.39
2.79
5.49
8.21
10.91
13.63
16.40
19.13
21.93
24.85
27.75