BF1207 T/R NXP Semiconductors, BF1207 T/R Datasheet - Page 13

• Manufacturer Part Number: BF1207 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1207 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1207,115

Philips Semiconductors
9397 750 14955
Product data sheet
Fig 16. Amplifier B: transfer characteristics; typical
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
D
30
20
10
0
V
values
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(B)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 5 V; V
8.2.1 Graphs for amplifier B
0.4
G1-S(A)
0.8
= 0 V; T
1.2
j
= 25 C.
(2)
1.6
V
001aac894
(1)
G1-S
(3)
(4)
(5)
(6)
(7)
(V)
2
Rev. 01 — 28 July 2005
Fig 17. Amplifier B: output characteristics; typical
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
D
32
24
16
8
0
V
values
0
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G2-S
= 4 V; V
= 1.7 V.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.
Dual N-channel dual gate MOSFET
G1-S(A)
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
= 0 V; T
j
= 25 C.
4
V
DS
001aac895
BF1207
(V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
6
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