BF1207 T/R NXP Semiconductors, BF1207 T/R Datasheet - Page 11

• Manufacturer Part Number: BF1207 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1207 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1207,115

Philips Semiconductors
9397 750 14955
Product data sheet
8.1.2 Scattering parameters for amplifier A
Table 9:
V
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1000
DS(A)
= 5 V; V
s
Magnitude
(ratio)
0.987
0.983
0.976
0.966
0.952
0.935
0.917
0.898
0.876
0.852
0.826
11
Scattering parameters for amplifier A
G2-S
= 4 V; I
Angle
(deg)
4.169
8.109
15.97
23.844 2.89
31.575 2.84
35.225 2.78
46.678 2.72
54.094 2.65
61.205 2.57
68.299 2.49
75.321 2.41
Rev. 01 — 28 July 2005
D(A)
= 18 mA; V
s
Magnitude
(ratio)
2.87
2.95
2.93
21
DS(B)
Angle
(deg)
175.5
171.14 0.0015
162.44 0.0028
153.77 0.0041
145.23 0.0053
136.82 0.0063
128.50 0.0072
120.44 0.0079
112.33 0.0084
104.32 0.0089
96.42
= 0 V; V
G1-S(B)
s
Magnitude
(ratio)
0.0008
0.0091
12
Dual N-channel dual gate MOSFET
= 0 V; T
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Angle
(deg)
83.82
82.08
77.50
73.45
69.42
65.72
61.48
58.05
52.74
48.61
43.86
amb
= 25 C; typical values.
s
Magnitude
(ratio)
0.992
0.992
0.990
0.989
0.986
0.984
0.981
0.977
0.974
0.970
0.967
22
BF1207
Angle
(deg)
11 of 22
1.42
2.86
5.66
8.49
11.28
14.03
16.80
19.55
22.32
25.10
27.88