BF909 T/R NXP Semiconductors, BF909 T/R Datasheet - Page 9

• Manufacturer Part Number: BF909 T/R
• Description: RF MOSFET Small Signal TAPE7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF909 T/R

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 40 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF909,215

NXP Semiconductors
Table 1 Scattering parameters: T
Table 2 Noise data: T
50
100
200
300
400
500
600
700
800
900
1000
(MHz)
N-channel dual gate MOS-FETs
f
(MHz)
MAGNITUDE
800
f
(ratio)
0.985
0.978
0.957
0.931
0.899
0.868
0.848
0.816
0.792
0.772
0.754
s
11
amb
ANGLE
= 25 C; V
(deg)
12.6
25.0
36.5
47.6
57.4
66.6
74.6
82.2
89.3
95.6
6.4
amb
(dB)
F
2.00
DS
MAGNITUDE
min
= 25 C; V
= 5 V; V
(ratio)
4.064
3.997
3.886
3.682
3.484
3.260
3.053
2.829
2.652
2.470
2.328
Rev. 02 - 19 November 2007
s
G2-S
DS
21
= 5 V; V
= 4 V; I
ANGLE
172.3
164.9
150.8
137.3
123.8
101.0
111.7
(deg)
90.3
79.9
69.5
59.5
(ratio)
0.603
G2-S
D
= 15 mA
= 4 V; I
MAGNITUDE
(ratio)
0.001
0.002
0.005
0.006
0.007
0.007
0.006
0.005
0.005
0.005
0.006
opt
D
= 15 mA
s
12
(deg)
67.71
ANGLE
138.7
114.9
(deg)
86.9
82.7
74.3
68.9
59.6
57.9
58.5
65.5
83.3
BF909; BF909R
MAGNITUDE
(ratio)
0.985
0.982
0.973
0.960
0.947
0.936
0.927
0.919
0.913
0.910
0.909
Product specification
0.581
s
r
22
n
9 of 12
ANGLE
(deg)
12.6
18.6
24.2
29.6
34.8
39.8
44.6
49.5
54.6
3.2
6.4