BF909 T/R NXP Semiconductors, BF909 T/R Datasheet - Page 3

• Manufacturer Part Number: BF909 T/R
• Description: RF MOSFET Small Signal TAPE7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF909 T/R

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 40 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF909,215

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
V
I
I
I
P
T
T
D
G1
G2
handbook, halfpage
stg
j
DS
tot
N-channel dual gate MOS-FETs
(mW)
P tot
SYMBOL
250
200
150
100
50
0
0
Fig.3 Power derating curves.
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
50
BF909R
BF909
BF909R
100
PARAMETER
BF909
150
T
amb
MLB935
( C)
o
Rev. 02 - 19 November 2007
200
see Fig.3
up to T
up to T
CONDITIONS
amb
amb
= 50 C; note 1
= 40 C; note 1
65
MIN.
BF909; BF909R
7
40
200
200
+150
150
10
10
Product specification
MAX.
3 of 12
V
mA
mA
mA
mW
mW
C
C
UNIT