BF909 T/R NXP Semiconductors, BF909 T/R Datasheet - Page 8

• Manufacturer Part Number: BF909 T/R
• Description: RF MOSFET Small Signal TAPE7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF909 T/R

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 40 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF909,215

NXP Semiconductors
N-channel dual gate MOS-FETs
V
I
D
(mS)
DS
Fig.16 Forward transfer admittance and phase as
y fs
= 15 mA; T
10
10
= 5 V; V
1
2
10
a function of frequency; typical values.
G2
amb
= 4 V.
= 25 C.
R GEN
50
10
V I
2
y fs
fs
f (MHz)
50
R2
Fig.18 Cross-modulation test set-up.
4.7 nF
MLB948
C2
10
V GG
10 k
Rev. 02 - 19 November 2007
3
R1
R G1
10
10
1
(deg)
V AGC
2
fs
4.7 nF
C1
handbook, halfpage
V
I
D
DUT
DS
(mS)
= 15 mA; T
y os
10
10
= 5 V; V
10
1
Fig.17 Output admittance as a function of
1
2
10
10
R3
C5
2.2
pF
G2
amb
V DS
= 4 V.
frequency; typical values.
= 25 C.
4.7 nF
L1
C3
350 nH
C4
12 pF
MLD151
10
R L
50
2
BF909; BF909R
b os
g os
Product specification
f (MHz)
MLB949
8 of 12
10
3