BF909 T/R NXP Semiconductors, BF909 T/R Datasheet - Page 5

• Manufacturer Part Number: BF909 T/R
• Description: RF MOSFET Small Signal TAPE7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF909 T/R

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 40 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF909,215

NXP Semiconductors
handbook, halfpage
handbook, halfpage
N-channel dual gate MOS-FETs
(dB V)
V
f
V
V
T
V unw
unw
Fig.4
j
DS
DS
G2-S
(mA)
= 25 C.
I D
= 60 MHz; T
= 5 V; V
= 5 V.
110
100
Fig.6 Output characteristics; typical values.
= 4 V.
90
80
30
20
10
0
0
0
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.18.
GG
= 5 V; f
amb
10
2
= 25 C; R
w
= 50 MHz.
20
4
V
G1
G1 S
= 120 k .
1.3 V
1.2 V
1.0 V
0.9 V
1.1 V
= 1.4 V
30
6
gain reduction (dB)
40
8
V
DS
MLB936
MLB938
(V)
Rev. 02 - 19 November 2007
50
10
handbook, halfpage
handbook, halfpage
V
T
V
T
j
j
(mA)
DS
DS
= 25 C.
= 25 C.
I D
( A)
I G1
= 5 V.
Fig.5 Transfer characteristics; typical values.
= 5 V.
Fig.7
30
20
10
200
150
100
0
50
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
0.4
1
0.8
V
G2 S
V
BF909; BF909R
G2 S
= 4 V 3 V
1.2
2
= 4 V
Product specification
3 V
3.5 V
2.5 V
2 V
V
1.6
G1 S
V
2 V
1.5 V
1 V
2.5 V
G1 S
MLB937
MLB939
(V)
5 of 12
(V)
2.0
3