BF909 T/R NXP Semiconductors, BF909 T/R Datasheet - Page 10

• Manufacturer Part Number: BF909 T/R
• Description: RF MOSFET Small Signal TAPE7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF909 T/R

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 40 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF909,215

NXP Semiconductors
PACKAGE OUTLINES
handbook, full pagewidth
N-channel dual gate MOS-FETs
Dimensions in mm.
Dimensions in mm.
handbook, full pagewidth
0.40
0.25
max
10
max
10
o
o
0.75
0.60
max
1.1
max
1.1
max
30
max
0.150
0.090
30
o
0.150
0.090
max
0.1
max
o
10
max
0.1
max
10
o
o
Rev. 02 - 19 November 2007
Fig.20 SOT143R.
Fig.19 SOT143.
0.48
0.38
0.88
0.1
2
3
M
0
0.1
4
TOP VIEW
TOP VIEW
1.7
B
3.0
2.8
1.9
1
3.0
2.8
1.9
1.7
1
4
3
2
0.88
0.78
0.48
0
0.1
A
B
0.1
1.4
1.2
A
MBC844
B
1.4
1.2
M
max
2.5
A B
max
2.5
0.2
BF909; BF909R
0.2
MBC845
M
M
A
Product specification
A B
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