BLF546 NXP Semiconductors, BLF546 Datasheet - Page 7

• Manufacturer Part Number: BLF546
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF546

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.6 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-268-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF546,112

Philips Semiconductors
2003 Sep 22
handbook, halfpage
UHF push-pull power MOS transistor
Class-B operation; V
Z
Fig.9
L
(dB)
= 2.3
G p
25
20
15
10
5
0
40
Power gain and efficiency as functions of
load power; typical values.
j2.7 (per section); f = 500 MHz.
G p
C
60
DS
= 28 V; I
DQ
80
= 2
80 mA;
100
P L (W)
MDA525
120
(%)
100
80
60
40
20
0
C
7
handbook, halfpage
Class-B operation; V
Z
Fig.10 Load power as a function of input power;
L
= 2.3
120
(W)
P L
80
40
0
0
typical values.
j2.7 (per section); f = 500 MHz.
DS
4
= 28 V; I
DQ
8
= 2
80 mA;
Product specification
12
P IN (W)
BLF546
MDA526
16